5秒后页面跳转
FDV303N PDF预览

FDV303N

更新时间: 2024-09-15 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
4页 68K
描述
Digital FET, N-Channel

FDV303N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:3.26
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:989741Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT?23 (TO?236Samacsys Released Date:2019-07-26 02:51:10
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):0.68 A
最大漏极电流 (ID):0.68 A最大漏源导通电阻:0.45 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDV303N 数据手册

 浏览型号FDV303N的Datasheet PDF文件第2页浏览型号FDV303N的Datasheet PDF文件第3页浏览型号FDV303N的Datasheet PDF文件第4页 
August 1997  
FDV303N  
Digital FET, N-Channel  
General Description  
Features  
25 V, 0.68 A continuous, 2 A Peak.  
These N-Channel enhancement mode field effect transistors are  
produced using Fairchild's proprietary, high cell density, DMOS  
technology. This very high density process is tailored to minimize  
on-state resistance at low gate drive conditions. This device is  
designed especially for application in battery circuits using either  
one lithium or three cadmium or NMH cells. It can be used as an  
inverter or for high-efficiency miniature discrete DC/DC  
conversion in compact portable electronic devices like cellular  
phones and pagers. This device has excellent on-state  
resistance even at gate drive voltages as low as 2.5 volts.  
RDS(ON) = 0.45 W @ VGS = 4.5 V  
RDS(ON) = 0.6 W @ VGS= 2.7 V.  
Very low level gate drive requirements allowing direct  
operation in 3V circuits. VGS(th) < 1.5V.  
Gate-Source Zener for ESD ruggedness.  
>6kV Human Body Model  
Compact industry standard SOT-23 surface mount  
package.  
Alternative to TN0200T and TN0201T.  
SuperSOTTM-8  
SuperSOTTM-6  
SOT-23  
SO-8  
SOIC-16  
SOT-223  
Mark:303  
D
S
G
Absolute Maximum Ratings TA = 25oC unless other wise noted  
Symbol Parameter  
FDV303N  
Units  
Drain-Source Voltage, Power Supply Voltage  
Gate-Source Voltage, VIN  
25  
V
VDSS  
VGSS  
ID  
8
V
A
Drain/Output Current  
- Continuous  
- Pulsed  
0.68  
2
Maximum Power Dissipation  
0.35  
W
°C  
kV  
PD  
Operating and Storage Temperature Range  
-55 to 150  
6.0  
TJ,TSTG  
ESD  
Electrostatic Discharge Rating MIL-STD-883D  
Human Body Model (100pf / 1500 Ohm)  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
357  
°C/W  
RqJA  
© 1997 Fairchild Semiconductor Corporation  
FDV303N Rev.D1  

FDV303N 替代型号

型号 品牌 替代类型 描述 数据表
RJK005N03T146 ROHM

功能相似

Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal

与FDV303N相关器件

型号 品牌 获取价格 描述 数据表
FDV303N (KDV303N) KEXIN

获取价格

N-Channel MOSFET
FDV303ND87Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
FDV303N-F169 ONSEMI

获取价格

N 沟道,数字 FET,25V,0.68A,0.45Ω
FDV303NL99Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
FDV303NS62Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
FDV304 FAIRCHILD

获取价格

Digital FET, P-Channel
FDV304P FAIRCHILD

获取价格

Digital FET, P-Channel
FDV304P TYSEMI

获取价格

SOT-23
FDV304P ONSEMI

获取价格

P 沟道,数字 FET,-25V,-0.46A,1.1Ω
FDV304P UMW

获取价格

种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C