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FDT3612

更新时间： 2024-09-19 11:13:55
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 209K
描述
N 沟道，Power Trench® MOSFET，100V，3.7A，120mΩ

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中文翻译

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FDT3612 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G4Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：8 weeks风险等级：0.94
雪崩能效等级（Eas）：90 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：3.7 A最大漏极电流 (ID)：3.7 A
最大漏源导通电阻：0.12 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1.1 W最大脉冲漏极电流 (IDM)：20 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDT3612 数据手册

 浏览型号FDT3612的Datasheet PDF文件第2页浏览型号FDT3612的Datasheet PDF文件第3页浏览型号FDT3612的Datasheet PDF文件第4页浏览型号FDT3612的Datasheet PDF文件第5页浏览型号FDT3612的Datasheet PDF文件第6页浏览型号FDT3612的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel,  
POWERTRENCH)  
V
R
MAX  
I MAX  
D
DSS  
DS(ON)  
100 V  
120 mW @ 10 V  
130 mW @ 6 V  
3.7 A  
100 V  
FDT3612  
D
S
General Description  
D
This N−Channel MOSFET has been designed specifically  
to improve the overall efficiency of DC/DC converters using either  
synchronous or conventional switching PWM controllers.  
These MOSFETs feature faster switching and lower gate charge  
G
SOT−223  
CASE 318H−01  
than other MOSFETs with comparable R  
specifications.  
DS(ON)  
MARKING DIAGRAM  
The result is a MOSFET that is easy and safer to drive (even at very  
high frequencies), and DC/DC power supply designs with higher  
overall efficiency.  
AYW  
3612G  
G
Features  
• 3.7 A, 100 V  
1
♦ R  
♦ R  
= 120 mW @ V = 10 V  
GS  
DS(ON)  
= 130 mW @ V = 6 V  
DS(ON)  
GS  
A
Y
W
3612  
G
= Assembly Location  
= Year  
= Work Week  
= Specific Device Code  
= Pb−Free Package  
• Fast Switching Speed  
• Low Gate Charge (14 nC Typ)  
• High Performance Trench Technology for Extremely Low R  
DS(ON)  
• High Power and Current Handling Capability in a Widely Used  
Surface Mount Package.  
(Note: Microdot may be in either location)  
• This is a Pb−Free Device  
PINOUT DIAGRAM  
Applications  
D
• DC/DC Converter  
• Power Management  
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)  
A
D
S
G
Symbol  
Parameter  
Drain−Source Voltage  
Value  
100  
20  
Unit  
V
V
DSS  
GSS  
V
Gate−Source Voltage  
V
ORDERING INFORMATION  
I
D
Drain Current  
A
− Continuous (Note 1a)  
3.7  
20  
†
Device  
FDT3612  
Shipping  
Package  
− Pulsed  
4000 / Tape & Reel  
SOT−223  
(Pb−Free)  
P
D
Maximum Power Dissipation  
(Note 1a)  
W
3.0  
1.3  
1.1  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
(Note 1b)  
(Note 1c)  
T , T  
Operating and Storage Temperature Range −55 to +150  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2022 − Rev. 4  
FDT3612/D  
1234567

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