Datasheet > FDT3612D84Z

FDT3612D84Z

更新时间： 2024-11-09 09:44:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	108K
描述
Power Field-Effect Transistor, 3.7A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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FDT3612D84Z 数据手册

March 2001

FDT3612

100V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

• 3.7 A, 100 V. R_DS(ON)= 120 mΩ @ V_GS= 10 V

_DS(ON)= 130 mΩ @ V_GS= 6 V

• Fast switching speed

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R_DS(ON)specifications. The result is a MOSFET that is

• Low gate charge (14nC typ)

easy and safer to drive (even at very high frequencies),

and DC/DC power supply designs with higher overall

efficiency.

• High performance trench technology for extremely

low R_DS(ON)

• High power and current handling capability in a

Applications

widely used surface mount package

• DC/DC converter

• Motor driving

SOT-223

(J23Z)

SOT-223

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

100

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±20

I_D

(Note 1a)

3.7

3.0

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

1.3

1.1

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_θJA

°C/W

Thermal Resistance, Junction-to-Case

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

3612

FDT3612

13’’

12mm

2500 units

FDT3612 Rev. C1 (W)

2001 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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与FDT3612D84Z相关器件

型号	品牌	获取价格	描述	数据表
FDT3612J23Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.7A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Me
FDT3612L99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.7A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Me
FDT37/25PSG1E-K1019	MOLEX	获取价格	D Subminiature Connector, 37 Contact(s), Male-Female, Solder Terminal, ROHS COMPLIANT
FDT37/25PSG1EL-K1019	MOLEX	获取价格	D Subminiature Connector, 37 Contact(s), Male-Female, Solder Terminal, ROHS COMPLIANT
FDT37/25PSG1ER-K1019	MOLEX	获取价格	D Subminiature Connector, 37 Contact(s), Male-Female, Solder Terminal, ROHS COMPLIANT
FDT37/25PSG1LR-K1019	MOLEX	获取价格	D Subminiature Connector, 37 Contact(s), Male-Female, Solder Terminal, ROHS COMPLIANT
FDT37/25PSG1ML-K1019	MOLEX	获取价格	D Subminiature Connector, 37 Contact(s), Male-Female, Solder Terminal, ROHS COMPLIANT
FDT37/25PSG1MR-K1019	MOLEX	获取价格	D Subminiature Connector, 37 Contact(s), Male-Female, Solder Terminal, ROHS COMPLIANT
FDT37/25PSG1SL-K1019	MOLEX	获取价格	D Subminiature Connector, 37 Contact(s), Male-Female, Solder Terminal, ROHS COMPLIANT
FDT37/25PSG2ER-K1019	MOLEX	获取价格	D Subminiature Connector, 37 Contact(s), Male-Female, Solder Terminal, ROHS COMPLIANT

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