Datasheet > FDR4420A_07

FDR4420A_07

更新时间： 2024-11-06 03:36:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	238K
描述
Single N-Channel, Logic Level, PowerTrenchTM MOSFET

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FDR4420A_07 数据手册

June 1998

FDR4420A

Single N-Channel, Logic Level, PowerTrench^TMMOSFET

General Description

Features

The SuperSOT-8 family of N-Channel Logic Level MOSFETs

have been designed to provide a low profile, small footprint

alternative to industry standard SO-8 little foot type product.

11 A, 30 V. R_DS(ON)= 0.009 W @ V_GS= 10 V,

R_DS(ON)= 0.013 W @ V_GS= 4.5 V.

Fast switching speed.

These MOSFETs are produced using Fairchild Semiconductor's

advanced PowerTrench process that has been tailored to

minimize the on-state resistance and yet maintain superior

switching performance.

Low gate charge.

Small footprint 38% smaller than a standard SO-8.

These devices are well suited for low voltage and battery

powered applications where small package size is required

Low profile package(1mm thick).

without compromising power handling and fast switching.

Power handling capability similar to SO-8.

SuperSOT^TM-8

SuperSOT^TM-6

SOT-23

SOIC-16

SO-8

SOT-223

SuperSOT^TM-8

Absolute Maximum Ratings T_A= 25^oC unless otherwise noted

Symbol Parameter

FDR4420A

Units

Drain-Source Voltage

V_DSS

V_GSS

I_D

Gate-Source Voltage

Draint Current - Continuous

- Pulsed

±20

(Note 1a)

1.8

Maximum Power Dissipation

(Note 1a)

(Note 1b)

P_D

(Note 1c)

0.9

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_qJA

R_qJC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

FDR4420 Rev.D

12 3 4 5 6

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