Datasheet > FDMS5360L-F085

FDMS5360L-F085

更新时间： 2024-09-22 11:13:39

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
7页	591K
描述
N 沟道，PowerTrench® MOSFET，60V，60A，6.5mΩ

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FDMS5360L-F085 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PDSO-F5	Reach Compliance Code：	not_compliant
风险等级：	5.6	雪崩能效等级（Eas）：	115 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (Abs) (ID)：	60 A
最大漏极电流 (ID)：	60 A	最大漏源导通电阻：	0.0105 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-F5
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	5
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	150 W
参考标准：	AEC-Q101	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FDMS5360L-F085 数据手册

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

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与FDMS5360L-F085相关器件

型号	品牌	获取价格	描述	数据表
FDMS5361L-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，60V，35A，11.7mΩ
FDMS5362L_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 17.6A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, M
FDMS5362L-F085	ONSEMI	获取价格	60 V、17.6 A、26 mΩ、Power 56N 沟道 UltraFET®
FDMS5672	FAIRCHILD	获取价格	N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm
FDMS5672	ONSEMI	获取价格	N 沟道，UltraFET Trench® MOSFET，60V，22A，11.5mΩ
FDMS5672_0712	FAIRCHILD	获取价格	N-Channel UltraFET Trench㈢ MOSFET
FDMS6673BZ	FAIRCHILD	获取价格	P-Channel PowerTrench® MOSFET -30 V, -28 A, 6
FDMS6673BZ	ONSEMI	获取价格	P 沟道 PowerTrench® MOSFET -30V，-82A，6.8mΩ
FDMS6681Z	FAIRCHILD	获取价格	P-Channel PowerTrench®MOSFET -30 V, -49 A, 3.
FDMS6681Z	ROCHESTER	获取价格	21100mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, POWER 56, MO-240AA, 8 P

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