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FDMS7556S PDF预览

FDMS7556S

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 260K
描述
Power Field-Effect Transistor, 35A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER56, 8 PIN

FDMS7556S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:QFN
包装说明:ROHS COMPLIANT, POWER56, 8 PIN针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.73
雪崩能效等级(Eas):312 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (Abs) (ID):49 A最大漏极电流 (ID):35 A
最大漏源导通电阻:0.0012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-240AAJESD-30 代码:R-PDSO-F5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):96 W
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDMS7556S 数据手册

 浏览型号FDMS7556S的Datasheet PDF文件第2页浏览型号FDMS7556S的Datasheet PDF文件第3页浏览型号FDMS7556S的Datasheet PDF文件第4页浏览型号FDMS7556S的Datasheet PDF文件第5页浏览型号FDMS7556S的Datasheet PDF文件第6页浏览型号FDMS7556S的Datasheet PDF文件第7页 
March 2013  
FDMS7556S  
N-Channel PowerTrench® SyncFETTM  
25 V, 130 A, 1.2 mΩ  
Features  
General Description  
The FDMS7556S has been designed to minimize losses in  
power conversion application. Advancements in both silicon and  
package technologies have been combined to offer the lowest  
rDS(on) while maintaining excellent switching performance. This  
device has the added benefit of an efficient monolithic Schottky  
body diode.  
„ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 35 A  
„ Max rDS(on) = 1.65 mΩ at VGS = 4.5 V, ID = 31 A  
„ Advanced Package and Silicon combination for low rDS(on)  
and high efficiency  
„ SyncFET Schottky Body Diode  
„ MSL1 robust package design  
„ 100% UIL tested  
Applications  
„ Synchronous Rectifier for Synchronous Buck Converters  
„ Notebook  
„ Server  
„ RoHS Compliant  
„ Telecom  
„ High Efficiency DC-DC Switch Mode Power Supplies  
Bottom  
Top  
Pin 1  
D
D
D
G
5
6
7
8
4
3
2
1
S
S
S
G
S
S
S
D
D
D
D
D
Power 56  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
25  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
(Note 4)  
±20  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25 °C  
130  
T
C = 25 °C  
222  
ID  
A
TA = 25 °C  
(Note 1a)  
(Note 3)  
35  
-Pulsed  
200  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
312  
mJ  
W
TC = 25 °C  
TA = 25 °C  
96  
PD  
Power Dissipation  
(Note 1a)  
2.5  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
1.3  
50  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
FDMS7556S  
FDMS7556S  
Power 56  
3000 units  
©2013 Fairchild Semiconductor Corporation  
FDMS7556S Rev.C3  
www.fairchildsemi.com  
1

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