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FDMS7600AS PDF预览

FDMS7600AS

更新时间: 2024-01-19 17:02:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
12页 477K
描述
Dual N-Channel PowerTrench® MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ

FDMS7600AS 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:16 weeks风险等级:1.52
Is Samacsys:N外壳连接:SOURCE
配置:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):120 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.0075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F6JESD-609代码:e4
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMS7600AS 数据手册

 浏览型号FDMS7600AS的Datasheet PDF文件第2页浏览型号FDMS7600AS的Datasheet PDF文件第3页浏览型号FDMS7600AS的Datasheet PDF文件第4页浏览型号FDMS7600AS的Datasheet PDF文件第5页浏览型号FDMS7600AS的Datasheet PDF文件第6页浏览型号FDMS7600AS的Datasheet PDF文件第7页 
December 2009  
FDMS7600AS  
Dual N-Channel PowerTrench® MOSFET  
N-Channel: 30 V, 30 A, 7.5 mN-Channel: 30 V, 40 A, 2.8 mΩ  
Features  
General Description  
Q1: N-Channel  
This device includes two specialized N-Channel MOSFETs in a  
dual MLP package.The switch node has been internally  
connected to enable easy placement and routing of synchronous  
buck converters. The control MOSFET (Q1) and synchronous  
SyncFET (Q2) have been designed to provide optimal power  
efficiency.  
„ Max rDS(on) = 7.5 mat VGS = 10 V, ID = 12 A  
„ Max rDS(on) = 12 mat VGS = 4.5 V, ID = 10 A  
Q2: N-Channel  
„ Max rDS(on) = 2.8 mat VGS = 10 V, ID = 20 A  
„ Max rDS(on) = 3.3 mat VGS = 4.5 V, ID = 18 A  
Applications  
„ RoHS Compliant  
„ Computing  
„ Communications  
„ General Purpose Point of Load  
„ Notebook VCORE  
S2  
S2  
Q2  
S2  
D1  
S2  
5
6
7
8
4
3
2
1
G2  
S1/D2  
D1  
D1  
S2  
S2  
G2  
D1  
G1  
D1  
D1  
D1  
G1  
Q1  
Top  
Bottom  
Power 56  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Q1  
30  
Q2  
30  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
(Note 3)  
TC = 25 °C  
TC = 25 °C  
TA = 25 °C  
±20  
30  
±20  
40  
Drain Current  
-Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
50  
121a  
120  
221b  
ID  
A
-Pulsed  
40  
60  
Power Dissipation for Single Operation  
TA = 25 °C  
TA = 25 °C  
2.21a  
1.01c  
2.51b  
1.01d  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJA  
RθJA  
RθJC  
Thermal Resistance, Junction to Ambient  
571a  
1251c  
3.5  
501b  
1201d  
2
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ”  
Tape Width  
Quantity  
FDMS7600AS  
FDMS7600AS  
Power 56  
12 mm  
3000 units  
1
©2009 Fairchild Semiconductor Corporation  
FDMS7600AS Rev.C  
www.fairchildsemi.com  

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