5秒后页面跳转
FDMS0312S PDF预览

FDMS0312S

更新时间: 2024-01-23 20:17:06
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 438K
描述
N 沟道,PowerTrench® SyncFET™,30V,42A,4.9mΩ

FDMS0312S 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.98
Is Samacsys:N雪崩能效等级(Eas):60 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):83 A
最大漏极电流 (ID):19 A最大漏源导通电阻:0.0044 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-240AA
JESD-30 代码:R-PDSO-F5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):46 W最大脉冲漏极电流 (IDM):90 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMS0312S 数据手册

 浏览型号FDMS0312S的Datasheet PDF文件第2页浏览型号FDMS0312S的Datasheet PDF文件第3页浏览型号FDMS0312S的Datasheet PDF文件第4页浏览型号FDMS0312S的Datasheet PDF文件第5页浏览型号FDMS0312S的Datasheet PDF文件第6页浏览型号FDMS0312S的Datasheet PDF文件第8页 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PQFN8 5X6, 1.27P  
CASE 483AE  
ISSUE C  
DATE 21 JAN 2022  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13655G  
PQFN8 5X6, 1.27P  
PAGE 1 OF 1  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  

与FDMS0312S相关器件

型号 品牌 描述 获取价格 数据表
FDMS037N08B ONSEMI N 沟道,PowerTrench® MOSFET,75V,100A,3.7mΩ

获取价格

FDMS039N08B FAIRCHILD New Products, Tips and Tools for Power and Mobile Applications

获取价格

FDMS039N08B ONSEMI N 沟道,PowerTrench® MOSFET,80V,100A,3.9mΩ

获取价格

FDMS10C4D2N ONSEMI N 沟道屏蔽门极 PowerTrench® MOSFET 100V,124A,4.2mΩ

获取价格

FDMS1D2N03DSD ONSEMI PowerTrench® Power Clip Asymmetric Dual N-Cha

获取价格

FDMS1D4N03S ONSEMI N 沟道,PowerTrench® SyncFETTM,30V,211A,1.09mΩ

获取价格

FDMS1D5N03 ONSEMI N 沟道,PowerTrench® SyncFETTM,30V,218A,1.15mΩ

获取价格

FDMS2380 FAIRCHILD Dual Integrated Solenoid Driver

获取价格

FDMS2502SDC FAIRCHILD Power Field-Effect Transistor, 43A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Me

获取价格

FDMS2504SDC FAIRCHILD N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240

获取价格

FDMS2506SDC FAIRCHILD N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240

获取价格

FDMS2508SDC FAIRCHILD N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240

获取价格

FDMS2572 FAIRCHILD N-Channel UltraFET Trench MOSFET

获取价格

FDMS2572 ONSEMI N 沟道,UltraFET Trench® MOSFET,150V,27A,47mΩ

获取价格

FDMS2572_07 FAIRCHILD N-Channel UltraFET Trench㈢ MOSFET 150V, 27A,

获取价格

FDMS2672 FAIRCHILD N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm

获取价格

FDMS2672 ONSEMI N 沟道,UltraFET Trench® MOSFET,200V,20A,77mΩ

获取价格

FDMS2672_12 FAIRCHILD N-Channel UltraFET Trench MOSFET 200V, 20A, 77m

获取价格

FDMS2734 FAIRCHILD N-Channel UltraFET Trench MOSFET 250V, 14A, 122mohm

获取价格

FDMS2734 ONSEMI N 沟道,UltraFET Trench® MOSFET,250V,14A,122mΩ

获取价格