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FDMS0312S PDF预览

FDMS0312S

更新时间: 2024-02-12 07:58:48
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 438K
描述
N 沟道,PowerTrench® SyncFET™,30V,42A,4.9mΩ

FDMS0312S 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.98
Is Samacsys:N雪崩能效等级(Eas):60 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):83 A
最大漏极电流 (ID):19 A最大漏源导通电阻:0.0044 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-240AA
JESD-30 代码:R-PDSO-F5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):46 W最大脉冲漏极电流 (IDM):90 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMS0312S 数据手册

 浏览型号FDMS0312S的Datasheet PDF文件第2页浏览型号FDMS0312S的Datasheet PDF文件第3页浏览型号FDMS0312S的Datasheet PDF文件第4页浏览型号FDMS0312S的Datasheet PDF文件第5页浏览型号FDMS0312S的Datasheet PDF文件第7页浏览型号FDMS0312S的Datasheet PDF文件第8页 
FDMS0312S  
TYPICAL CHARACTERISTICS (CONTINUED)  
SyncFET Schottky Body Diode Characteristics  
onsemi’s SyncFET process embeds a Schottky diode in  
parallel with POWERTRENCH MOSFET. This diode  
exhibits similar characteristics to a discrete external Schottky  
diode in parallel with a MOSFET. Figure 14 shows the  
reverses recovery characteristic of the FDMS0312S.  
Schottky barrier diodes exhibit significant leakage at high  
temperature and high reverse voltage. This will increase the  
power in the device.  
10−2  
20  
15  
T = 125°C  
J
10−3  
T = 100°C  
J
di/dt = 300 A/ms  
10  
10−4  
5
0
T = 25°C  
J
10−5  
10−6  
−5  
0
30  
60  
90  
120  
150  
0
5
10  
15  
20  
25  
30  
TIME (ns)  
V
DS  
, REVERSE VOLTAGE (V)  
Figure 14. FDMS0312S SyncFET Body  
Diode Reverse Recovery Characteristic  
Figure 15. SyncFET Body Diode Reverses  
Leakage vs. Drain−Source Voltage  
PACKAGE MARKING AND ORDERING INFORMATION  
Device  
Device Marking  
Package Type  
Reel Size  
Tape Width  
Shipping  
FDMS0312S  
FDMS0312S  
PQFN8 5X6, 1.27P  
(Power 56)  
13”  
12 mm  
3000 / Tape & Reel  
(Pb−Free, Halide Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United  
States and/or other countries.  
SyncFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other  
countries.  
www.onsemi.com  
6
 

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