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FDMS0312S PDF预览

FDMS0312S

更新时间: 2024-01-30 14:08:41
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 438K
描述
N 沟道,PowerTrench® SyncFET™,30V,42A,4.9mΩ

FDMS0312S 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.98
Is Samacsys:N雪崩能效等级(Eas):60 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):83 A
最大漏极电流 (ID):19 A最大漏源导通电阻:0.0044 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-240AA
JESD-30 代码:R-PDSO-F5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):46 W最大脉冲漏极电流 (IDM):90 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMS0312S 数据手册

 浏览型号FDMS0312S的Datasheet PDF文件第1页浏览型号FDMS0312S的Datasheet PDF文件第2页浏览型号FDMS0312S的Datasheet PDF文件第4页浏览型号FDMS0312S的Datasheet PDF文件第5页浏览型号FDMS0312S的Datasheet PDF文件第6页浏览型号FDMS0312S的Datasheet PDF文件第7页 
FDMS0312S  
TYPICAL CHARACTERISTICS  
(T = 25°C UNLESS OTHERWISE NOTED)  
J
90  
60  
30  
0
12  
V
GS  
= 3 V  
PULSE DURATION = 80 ms  
DUTY CYCLE = 0.5% MAX  
10  
8
PULSE DURATION = 80 ms  
DUTY CYCLE = 0.5% MAX  
V
GS  
V
GS  
V
GS  
= 10 V  
= 4.5 V  
= 4 V  
V
GS  
= 3.5 V  
V
GS  
= 3.5 V  
6
V
GS  
= 10 V  
4
V
= 4 V  
V
GS  
= 4.5 V  
GS  
2
V
GS  
= 3 V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
0
30  
60  
90  
V
DS  
, DRAIN TO SOURCE VOLTAGE (V)  
I , DRAIN CURRENT (A)  
D
Figure 1. On−Region Characteristics  
Figure 2. Normalized On−Resistance vs.  
Drain Current and Gate Voltage  
12  
10  
8
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
I
V
= 18 A  
PULSE DURATION = 80 ms  
DUTY CYCLE = 0.5% MAX  
D
I
D
= 18 A  
= 10 V  
GS  
T = 125°C  
J
6
4
T = 25°C  
J
2
−75 −50 −25  
0
25  
50  
75 100 125 150  
2
4
6
8
10  
T , JUNCTION TEMPERATURE (°C)  
J
V
GS  
, GATE TO SOURCE VOLTAGE (V)  
Figure 3. Normalized On−Resistance vs. Junction  
Temperature  
Figure 4. On−Resistance vs. Gate to Source Voltage  
90  
100  
PULSE DURATION = 80 ms  
V
GS  
= 0 V  
DUTY CYCLE = 0.5% MAX  
10  
1
V
DS  
= 5 V  
60  
30  
0
T = 125°C  
J
T = 125°C  
J
T = 25°C  
J
0.1  
T = 25°C  
J
T = −55°C  
J
0.01  
T = −55°C  
J
0.001  
1
2
3
4
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
GS  
, GATE TO SOURCE VOLTAGE (V)  
V
SD  
, BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure 6. Source to Drain Diode Forward Voltage vs.  
Source Current  
www.onsemi.com  
3

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