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FDMS0312AS PDF预览

FDMS0312AS

更新时间: 2024-02-02 00:09:33
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 504K
描述
N 沟道,PowerTrench® SyncFET™,30V,22A,5.0mΩ

FDMS0312AS 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:8 weeks风险等级:0.97
雪崩能效等级(Eas):33 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):22 A最大漏极电流 (ID):18 A
最大漏源导通电阻:0.005 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-240AAJESD-30 代码:R-PDSO-F5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):36 W
最大脉冲漏极电流 (IDM):100 A子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMS0312AS 数据手册

 浏览型号FDMS0312AS的Datasheet PDF文件第3页浏览型号FDMS0312AS的Datasheet PDF文件第4页浏览型号FDMS0312AS的Datasheet PDF文件第5页浏览型号FDMS0312AS的Datasheet PDF文件第6页浏览型号FDMS0312AS的Datasheet PDF文件第7页浏览型号FDMS0312AS的Datasheet PDF文件第8页 
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