是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F5 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 8 weeks | 风险等级: | 0.97 |
雪崩能效等级(Eas): | 33 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 22 A | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.005 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MO-240AA | JESD-30 代码: | R-PDSO-F5 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 36 W |
最大脉冲漏极电流 (IDM): | 100 A | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FDMS0312S | FAIRCHILD | N-Channel PowerTrench® SyncFETTM |
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FDMS0312S | ONSEMI | N 沟道,PowerTrench® SyncFET™,30V,42A,4.9mΩ |
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|
FDMS037N08B | ONSEMI | N 沟道,PowerTrench® MOSFET,75V,100A,3.7mΩ |
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|
FDMS039N08B | FAIRCHILD | New Products, Tips and Tools for Power and Mobile Applications |
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|
FDMS039N08B | ONSEMI | N 沟道,PowerTrench® MOSFET,80V,100A,3.9mΩ |
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FDMS10C4D2N | ONSEMI | N 沟道屏蔽门极 PowerTrench® MOSFET 100V,124A,4.2mΩ |
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|
FDMS1D2N03DSD | ONSEMI | PowerTrench® Power Clip Asymmetric Dual N-Cha |
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|
FDMS1D4N03S | ONSEMI | N 沟道,PowerTrench® SyncFETTM,30V,211A,1.09mΩ |
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|
FDMS1D5N03 | ONSEMI | N 沟道,PowerTrench® SyncFETTM,30V,218A,1.15mΩ |
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|
FDMS2380 | FAIRCHILD | Dual Integrated Solenoid Driver |
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