Datasheet > FDLL457AS62Z

FDLL457AS62Z

更新时间： 2024-09-08 14:42:11

品牌	Logo	应用领域
德州仪器 - TI		二极管
页数	文件大小	规格书
2页	36K
描述
0.2A, SILICON, SIGNAL DIODE, LL-34, 2 PIN

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技术参数
数据手册

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FDLL457AS62Z 技术参数

生命周期：	Transferred	包装说明：	O-LELF-R2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.74
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1 V	JESD-30 代码：	O-LELF-R2
最大非重复峰值正向电流：	4 A	元件数量：	1
端子数量：	2	最高工作温度：	175 °C
最大输出电流：	0.2 A	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
最大功率耗散：	0.5 W	认证状态：	Not Qualified
最大反向电流：	0.025 µA	表面贴装：	YES
端子形式：	WRAP AROUND	端子位置：	END
Base Number Matches：	1

FDLL457AS62Z 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

1N/FDLL 456/A - 1N/FDLL 459/A

COLOR BAND MARKING

DEVICE 1ST BAND 2ND BAND

FDLL456

FDLL456A BROWN

BROWN

WHITE

BLACK

BROWN

RED

FDLL457 RED

FDLL457A RED

FDLL458 RED

FDLL458A RED

RED

FDLL459A RED

LL-34

FDLL459

THE PLACEMENT OF THE EXPANSION GAP

HAS NO RELATIONSHIP TO THE LOCATION

OF THE CATHODE TERMINAL

DO-35

RED

High Conductance Low Leakage Diode

Sourced from Process 1M.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

W_IV

Working Inverse Voltage

456/A

457/A

458/A

459/A

125

175

200

I_O

Average Rectified Current

DC Forward Current

I_F

500

600

Recurrent Peak Forward Current

i_f

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

Storage Temperature Range

i_f(surge)

1.0

4.0

-65 to +200

°C

T_stg

T_J

Operating Junction Temperature

175

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

1N / FDLL 456/A - 459/A

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

500

3.33

300

mW/°C

°C/W

R_θ

中文翻译

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