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FDLL458LL99Z PDF预览

FDLL458LL99Z

更新时间: 2024-11-25 10:28:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
3页 37K
描述
Rectifier Diode, 1 Element, 0.2A, Silicon, LL-34, 2 PIN

FDLL458LL99Z 技术参数

生命周期:Obsolete包装说明:O-LELF-R2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.64外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-LELF-R2
元件数量:1端子数量:2
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.5 W认证状态:Not Qualified
表面贴装:YES端子形式:WRAP AROUND
端子位置:ENDBase Number Matches:1

FDLL458LL99Z 数据手册

 浏览型号FDLL458LL99Z的Datasheet PDF文件第2页浏览型号FDLL458LL99Z的Datasheet PDF文件第3页 
1N/FDLL 456/A - 1N/FDLL 459/A  
COLOR BAND MARKING  
DEVICE  
1ST BAND 2ND BAND  
FDLL456  
BROWN  
WHITE  
WHITE  
BLACK  
BLACK  
BROWN  
BROWN  
RED  
FDLL456A BROWN  
FDLL457 RED  
FDLL457A RED  
FDLL458 RED  
FDLL458A RED  
FDLL459 RED  
LL-34  
THE PLACEMENT OF THE EXPANSION GAP  
HAS NO RELATIONSHIP TO THE LOCATION  
OF THE CATHODE TERMINAL  
DO-35  
FDLL459A RED  
RED  
High Conductance Low Leakage Diode  
Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
WIV  
Working Inverse Voltage  
25  
60  
125  
175  
200  
V
V
V
V
mA  
456/A  
457/A  
458/A  
459/A  
IO  
Average Rectified Current  
DC Forward Current  
IF  
500  
600  
mA  
mA  
Recurrent Peak Forward Current  
if  
Peak Forward Surge Current  
Pulse width = 1.0 second  
if(surge)  
1.0  
4.0  
A
A
Pulse width = 1.0 microsecond  
Storage Temperature Range  
-65 to +200  
C
°
Tstg  
TJ  
Operating Junction Temperature  
175  
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
1N / FDLL 456/A - 459/A  
PD  
Total Device Dissipation  
Derate above 25 C  
Thermal Resistance, Junction to Ambient  
500  
3.33  
300  
mW  
mW/ C  
°
°
Rθ  
C/W  
°
JA  
1997 Fairchild Semiconductor Corporation  

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