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FDLL456A

更新时间: 2024-11-24 10:32:15
品牌 Logo 应用领域
美国国家半导体 - NSC 二极管
页数 文件大小 规格书
2页 35K
描述
High Conductance Low Leakage Diode

FDLL456A 数据手册

 浏览型号FDLL456A的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
N
1N/FDLL 456/A - 1N/FDLL 459/A  
COLOR BAND MARKING  
DEVICE 1ST BAND 2ND BAND  
FDLL456  
FDLL456A BROWN  
BROWN  
WHITE  
WHITE  
BLACK  
BLACK  
BROWN  
BROWN  
RED  
FDLL457 RED  
FDLL457A RED  
FDLL458 RED  
FDLL458A RED  
RED  
FDLL459A RED  
LL-34  
FDLL459  
THE PLACEMENT OF THE EXPANSION GAP  
HAS NO RELATIONSHIP TO THE LOCATION  
OF THE CATHODE TERMINAL  
DO-35  
RED  
High Conductance Low Leakage Diode  
Sourced from Process 1M.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
WIV  
Working Inverse Voltage  
456/A  
457/A  
458/A  
459/A  
25  
60  
125  
175  
200  
V
V
V
V
mA  
IO  
Average Rectified Current  
DC Forward Current  
IF  
500  
600  
mA  
mA  
Recurrent Peak Forward Current  
if  
Peak Forward Surge Current  
Pulse width = 1.0 second  
Pulse width = 1.0 microsecond  
Storage Temperature Range  
if(surge)  
1.0  
4.0  
-65 to +200  
A
A
°C  
Tstg  
TJ  
Operating Junction Temperature  
175  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
1N / FDLL 456/A - 459/A  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
500  
3.33  
300  
mW  
mW/°C  
°C/W  
Rθ  
JA  

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