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FDLL444D87Z PDF预览

FDLL444D87Z

更新时间: 2024-11-24 14:33:35
品牌 Logo 应用领域
德州仪器 - TI 二极管
页数 文件大小 规格书
2页 36K
描述
0.2A, SILICON, SIGNAL DIODE, LL-34, 2 PIN

FDLL444D87Z 技术参数

生命周期:Obsolete包装说明:O-LELF-R2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.84
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:O-LELF-R2最大非重复峰值正向电流:4 A
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Not Qualified最大反向电流:0.05 µA
最大反向恢复时间:0.06 µs表面贴装:YES
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

FDLL444D87Z 数据手册

 浏览型号FDLL444D87Z的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
N
FDH/FDLL 400 / 444  
COLOR BAND MARKING  
DEVICE  
FDLL400  
FDLL444  
1ST BAND 2ND BAND  
BROWN  
BROWN  
VIOLET  
GRAY  
LL-34  
DO-35  
THE PLACEMENT OF THE EXPANSION GAP  
HAS NO RELATIONSHIP TO THE LOCATION  
OF THE CATHODE TERMINAL  
High Voltage General Purpose Diode  
Sourced from Process 1J.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
WIV  
Working Inverse Voltage  
FDH/FDLL 400  
FDH/FDLL 444  
150  
100  
200  
V
V
mA  
IO  
Average Rectified Current  
DC Forward Current  
IF  
500  
600  
mA  
mA  
Recurrent Peak Forward Current  
if  
Peak Forward Surge Current  
Pulse width = 1.0 second  
if(surge)  
1.0  
4.0  
A
A
Pulse width = 1.0 microsecond  
Storage Temperature Range  
-65 to +200  
°C  
Tstg  
TJ  
Operating Junction Temperature  
175  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
FDH/FDLL 400 / 444  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
500  
3.33  
300  
mW  
mW/°C  
°C/W  
Rθ  
JA  

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