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FDD3670 PDF预览

FDD3670

更新时间: 2024-11-23 22:13:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 169K
描述
100V N-Channel PowerTrench MOSFET

FDD3670 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:DPAK
包装说明:DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.32
Is Samacsys:N雪崩能效等级(Eas):360 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):34 A
最大漏极电流 (ID):34 A最大漏源导通电阻:0.032 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.6 W最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDD3670 数据手册

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January 2000  
ADVANCE INFORMATION  
FDD3670  
100V N-Channel PowerTrench MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers.  
34 A, 100 V. RDS(ON) = 0.030 @ VGS = 10 V  
RDS(ON) = 0.033 @ VGS = 6 V  
Low gate charge (57 nC typical)  
Fast switching speed  
These MOSFETs feature faster switching and lower  
gate charge than other MOSFETs with comparable  
RDS(ON) specifications.  
High performance trench technology for extremely  
The result is a MOSFET that is easy and safer to drive  
(even at very high frequencies), and DC/DC power  
supply designs with higher overall efficiency.  
low RDS(ON)  
High power and current handling capability.  
D
D
G
G
S
TO-252  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
100  
VGSS  
ID  
Gate-Source Voltage  
V
A
±20  
34  
Drain Current – Continuous  
Drain Current – Pulsed  
Maximum Power Dissipation @ TC = 25°C  
@ TA = 25°C  
(Note 1)  
100  
PD  
70  
W
(Note 1)  
(Note 1a)  
(Note 1b)  
3.2  
1.3  
@ TA = 25°C  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
(Note 1)  
1.8  
96  
RθJC  
°C/W  
°C/W  
(Note 1b)  
RθJA  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDD3670  
FDD3670  
13’’  
16mm  
2500 units  
FDD3670 Rev A(W)  
2000 Fairchild Semiconductor Corporation  

FDD3670 替代型号

型号 品牌 替代类型 描述 数据表
FDD3860 FAIRCHILD

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FDD3682 FAIRCHILD

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N-Channel PowerTrench MOSFET 100V, 32A, 36mз
FDD3672 FAIRCHILD

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N-Channel UltraFET Trench MOSFET 100V, 44A, 2

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