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FDD3672 PDF预览

FDD3672

更新时间： 2024-11-28 11:15:55
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
14页 521K
描述
N 沟道，UltraFET® Trench MOSFET，100V，44A，28mΩ

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中文翻译

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FDD3672 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.71
雪崩能效等级（Eas）：120 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：6.5 A最大漏极电流 (ID)：6.5 A
最大漏源导通电阻：0.028 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：135 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDD3672 数据手册

 浏览型号FDD3672的Datasheet PDF文件第2页浏览型号FDD3672的Datasheet PDF文件第3页浏览型号FDD3672的Datasheet PDF文件第4页浏览型号FDD3672的Datasheet PDF文件第5页浏览型号FDD3672的Datasheet PDF文件第6页浏览型号FDD3672的Datasheet PDF文件第7页 
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FDD3672 替代型号

型号 品牌 替代类型 描述 数据表
FDD3672_NL FAIRCHILD

功能相似

 Power Field-Effect Transistor, 6.5A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, M

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 		N 沟道，UltraFET® Trench MOSFET，100V，44A，28mΩ
FDD3680 FAIRCHILD

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 		100V N-Channel PowerTrench MOSFET
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 		N 沟道，PowerTrench® MOSFET，100V，25A，46mΩ
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 		Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Me
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 		N-Channel PowerTrench MOSFET 100V, 32A, 36mз
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 		N沟道Power Trench® MOSFET，100V，32A，0.036 ohm

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