FDD2570_NL

更新时间： 2024-11-18 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲
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5页	100K
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数据手册

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FDD2570_NL 数据手册

February 2001

FDD2570

150V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

• 4.7 A, 150 V. R_DS(ON)= 80 mΩ @ V_GS= 10 V

R_DS(ON)= 90 mΩ @ V_GS= 6 V

• Low gate charge

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R_DS(ON)specifications.

• Fast switching speed

• High performance trench technology for extremely

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

low R_DS(ON)

• High power and current handling capability.

TO-252

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

150

V_GSS

Gate-Source Voltage

±20

I_D

Drain Current – Continuous

Drain Current – Pulsed

Maximum Power Dissipation @ T_C= 25°C

@ T_A= 25°C

(Note 1a)

4.7

P_D

(Note 1)

(Note 1a)

(Note 1b)

3.2

1.3

@ T_A= 25°C

°C

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

R_θJC

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

1.8

R_θJA

Thermal Resistance, Junction-to-Ambient

(Note 1b)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD2570

13’’

16mm

2500 units

FDD2570 Rev C(W)

2001 Fairchild Semiconductor Corporation

12 3 4 5

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