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FDA50N50 PDF预览

FDA50N50

更新时间: 2024-02-05 14:14:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 223K
描述
500V N-Channel MOSFET

FDA50N50 技术参数

生命周期:Obsolete零件包装代码:TO-3PN
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.74
Is Samacsys:N雪崩能效等级(Eas):1868 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (ID):48 A最大漏源导通电阻:0.105 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):192 A认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDA50N50 数据手册

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TM  
UniFET  
FDH50N50 / FDA50N50  
500V N-Channel MOSFET  
Features  
Description  
48A, 500V, R  
= 0.105@V = 10 V  
These N-Channel enhancement mode power field effect transis-  
tors are produced using Fairchild’s proprietary, planar stripe,  
DMOS technology.  
DS(on)  
GS  
Low gate charge ( typical 105 nC)  
Low C ( typical 45 pF)  
rss  
This advanced technology has been especially tailored to mini-  
mize on-state resistance, provide superior switching perfor-  
mance, and withstand high energy pulse in the avalanche and  
commutation mode. These devices are well suited for high effi-  
cient switched mode power supplies and active power factor  
correction.  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
"
! "  
"
G
!
"
TO-247  
TO-3P  
!
S
G
D
S
FDH Series  
FDA Series  
G D S  
Absolute Maximum Ratings  
Symbol  
Parameter  
FDH50N50/FDA50N50  
Unit  
V
Drain-Source Voltage  
Drain Current  
500  
V
DSS  
I
- Continuous (T = 25°C)  
48  
30.8  
A
A
D
C
- Continuous (T = 100°C)  
C
(Note 1)  
(Note 2)  
I
Drain Current  
- Pulsed  
192  
±20  
1868  
48  
A
V
DM  
V
E
Gate-Source voltage  
GSS  
AS  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
I
(Note 1)  
(Note 1)  
(Note 3)  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
62.5  
4.5  
mJ  
V/ns  
AR  
dv/dt  
P
Power Dissipation  
(T = 25°C)  
- Derate above 25°C  
625  
5
W
W/°C  
D
C
T
T
T
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
°C  
J, STG  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
L
Thermal Characteristics  
Symbol  
Parameter  
Min.  
--  
Max.  
0.2  
--  
Unit  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
θJC  
θCS  
θJA  
0.24  
--  
Thermal Resistance, Junction-to-Ambient  
40  
©2004 Fairchild Semiconductor Corporation  
FDH50N50 / FDA50N50 Rev. A  
1
www.fairchildsemi.com  

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