Datasheet > FDA50N50-SWUA001

FDA50N50-SWUA001

更新时间： 2024-01-06 05:41:34

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	222K
描述
Transistor

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技术参数
数据手册

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FDA50N50-SWUA001 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

FDA50N50-SWUA001 数据手册

UniFET

FDH50N50 / FDA50N50

500V N-Channel MOSFET

Features

Description

•

48A, 500V, R

= 0.105Ω @V = 10 V

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

DS(on)

Low gate charge ( typical 105 nC)

Low C ( typical 45 pF)

rss

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switched mode power supplies and active power factor

correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

TO-247

TO-3P

FDH Series

FDA Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FDH50N50/FDA50N50

Unit

Drain-Source Voltage

Drain Current

500

DSS

- Continuous (T = 25°C)

30.8

- Continuous (T = 100°C)

(Note 1)

(Note 2)

Drain Current

- Pulsed

192

±20

1868

Gate-Source voltage

GSS

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

62.5

4.5

V/ns

dv/dt

Power Dissipation

(T = 25°C)

- Derate above 25°C

625

W/°C

Operating and Storage Temperature Range

-55 to +150

300

°C

J, STG

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics

Symbol

Parameter

Min.

Max.

0.2

Unit

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

θJC

θCS

θJA

0.24

Thermal Resistance, Junction-to-Ambient

FDH50N50 / FDA50N50 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

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