Datasheet > FDA70N20

FDA70N20

更新时间： 2024-09-30 03:36:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	854K
描述
200V N-Channel MOSFET

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中文翻译

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数据手册
替代型号

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FDA70N20 数据手册

UniFET^TM

FDA70N20

200V N-Channel MOSFET

Features

Description

•

70A, 200V, R_DS(on)= 0.035Ω @V_GS= 10 V

Low gate charge ( typical 66 nC)

Low C_rss( typical 89 pF)

Fast switching

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switched mode power supplies and active power factor

correction.

100% avalanche tested

Improved dv/dt capability

{

ꢀ ꢁ

{

TO-3P

FDA Series

G D S

Absolute Maximum Ratings

Symbol

V_DSS

Parameter

FDA70N20

Unit

Drain-Source Voltage

Drain Current

200

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

280

±30

1742

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

41.7

4.5

V/ns

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

417

3.3

W/°C

_J,T_STG

Operating and Storage Temperature Range

-55 to +150

°C

T_L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Min.

Max.

0.3

Unit

°C/W

R_θJC

R_θCS

R_θJA

0.24

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

FDA70N20 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

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FDA70N20 替代型号

型号	品牌	替代类型	描述	数据表
STW75NF20	STMICROELECTRONICS	功能相似	N-channel 200V - 0.028ヘ - 75A - D2PAK - TO-22

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