Datasheet > FDA50N50_12

FDA50N50_12

更新时间： 2024-01-28 16:57:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	551K
描述
500V N-Channel MOSFET

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FDA50N50_12 数据手册

February 2012

UniFET

FDH50N50_F133 / FDA50N50

500V N-Channel MOSFET

Features

Description

•

48A, 500V, R_DS(on)= 0.105Ω @V_GS= 10 V

Low gate charge ( typical 105 nC)

Low C_rss( typical 45 pF)

Fast switching

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switched mode power supplies and active power factor

correction.

100% avalanche tested

Improved dv/dt capability

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ꢀ ꢁ

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TO-247

TO-3PN

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FDH Series

FDA Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FDH50N50_F133/FDA50N50

Unit

V_DSS

Drain-Source Voltage

Drain Current

500

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

30.8

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

192

±20

1868

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

62.5

V/ns

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

625

W/°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

Min.

Max.

0.2

Unit

°C/W

R_θJC

R_θCS

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.24

Thermal Resistance, Junction-to-Ambient

FDH50N50_F133 / FDA50N50 Rev.C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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