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FD100H06A5B PDF预览

FD100H06A5B

更新时间： 2024-11-25 21:10:15
品牌 Logo 应用领域
威世 - VISHAY 快速恢复二极管
页数 文件大小 规格书
3页 146K
描述
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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FD100H06A5B 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：WAFER包装说明：R-XUUC-N1
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.40风险等级：5.49
应用：FAST RECOVERY外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：2.4 V
JESD-30 代码：R-XUUC-N1湿度敏感等级：1
元件数量：1相数：1
端子数量：1封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：UNCASED CHIP
峰值回流温度（摄氏度）：225认证状态：Not Qualified
最大重复峰值反向电压：600 V最大反向恢复时间：0.02 µs
子类别：Rectifier Diodes表面贴装：YES
端子形式：NO LEAD端子位置：UPPER
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

FD100H06A5B 数据手册

 浏览型号FD100H06A5B的Datasheet PDF文件第2页浏览型号FD100H06A5B的Datasheet PDF文件第3页 
PD - 20201 revꢀꢁ  
FD100H06A5B  
FRED Die in Wafer Form  
600V  
VF = 2.4 V  
(max.)  
z 100% Tested at Probe c  
z Available in Tape and Reel (upon request),  
Chip Pack, and Sawn on Film d  
5" Wafer  
Electrical Characteristics @ T = 25°C (unless otherwise specified)  
J
Parameter  
Description  
Min  
Typ  
–––  
Max  
Test Conditions  
VFM  
VRRM  
IRM  
Maximum Forward Voltage  
–––  
2.4V TJ = 25°C, IF = 8A  
Minimum Reverse Breakdown Voltage 600V  
Max. Reverse Leakage Current  
Typ. Reverse Recovery Time  
–––  
––– TJ = 25°C, IRRM = 200µA  
50µA TJ = 25°C, VRRM = 600V  
––– IF = 1A, di/dt = 100A/µs, VR = 30V  
––– IF = 8A, di/dt = 100A/µs, VR = 30V  
––– TJ = 125°C, IF = 8A, di/dt = 600A/µs, VR = 390V  
–––  
–––  
–––  
–––  
–––  
trr  
18ns  
20ns  
220nC  
Qrr  
Typ. Reverse Recovery Charge  
Mechanical Data  
Nominal Back Metal Composition, Thickness:  
Nominal Front Metal Composition, Thickness:  
Dimensions:  
Cr-Ni-Ag ( 1kA-2kA-3kA)  
99%Al, 1%Si (3ꢆꢇ)  
0.100" x 0.100" (see drawing)  
125 mm  
14mꢈꢉꢊ  
90 ±10 µm  
Wafer Diameter:  
Wafer Thickness:  
Scribe Line Width  
Reject Ink Dot Size  
0.25 mm Diameter Minimum  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300 °C  
8ETH06 Series  
Recommended Storage Environment:  
Recommended Die Attach Conditions:  
Reference Packaged Part  
Die Outline  
NOTES:  
40 (1.57)  
Wafer flat alligned with  
side b of the die  
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).  
2. CONTROLLING DIMENSION (INCH):  
a
c
0.35 ± 0.01  
(14 ± 0.4)  
3. DIMENSIONS AND TOLERANCES:  
a = 2.54 +0, - 0.01  
(100 +0, - 0.4)  
b = 2.54 +0, - 0.01  
(100 +0, - 0.4)  
C
c = 1.48 +0, - 0.01  
(58.1 +0, - 0.4)  
A
d = 1.48 +0, - 0.01  
(58.1 +0, - 0.4)  
4. LETTER DESIGNATION:  
A = Anode (Top Metal)  
C = Cathode (Back Metal)  
5. SAWING:  
Ø
125 (4.92)  
Recommended Blade  
SEMITEC S1025 QS00 Blade  
Note:  
c The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is  
provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged  
and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured  
using IR’s established processes. Programs for customer-specified testing are available upon request. IR has  
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.  
Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a  
number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard  
package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms  
and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which  
are available upon request.  
d Part number shown is for die in waveform. Contact factory for these other options.  
Document Number: 93766  
ꢂꢃꢄꢂ5ꢄꢂꢅ  
www.vishay.com  
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