Bulletin I - 0517J rev. C 03/07
FD100U06A5B
FRED Die in Wafer Form
600V
VF = 1.9V
(max.)
z 100% Tested at Probe c
z Available in Tape and Reel (upon request),
Chip Pack, and Sawn on Film d
5" Wafer
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Description
Min
Typ
Max
Test Conditions
VFM
Maximum Forward Voltage
–––
–––
1.9V TJ = 25°C, IF = 8A
VRRM
IRM
Minimum Reverse Breakdown Voltage 600V
–––
––– TJ = 25°C, IRRM = 200µA
Max. Reverse Leakage Current
Typ. Reverse Recovery Time
–––
–––
–––
–––
–––
50µA TJ = 25°C, VRRM = 600V
trr
27ns
45ns
280nC
––– IF = 1A, di/dt = 100A/µs, VR = 30V
––– IF = 8A, di/dt = 200A/µs, VR = 200V
––– TJ = 125°C, IF = 8A, di/dt = 200A/µs, VR = 200V
Qrr
Typ. Reverse Recovery Charge
Mechanical Data
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Cr-Ni-Ag ( 1kA-2kA-3kA)
99%Al, 1%Si (3µm)
0.100" x 0.100" (see drawing)
125 mm
Wafer Diameter:
Wafer Thickness:
14 mils
Scribe Line Width
90 10 µm
Reject Ink Dot Size
0.25 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
TO-220
Recommended Storage Environment:
Recommended Die Attach Conditions:
Reference Package
Die Outline
NOTES:
40 (1.57)
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).
Wafer flat alligned with
side b of the die
2. CONTROLLING DIMENSION (INCH):
a
c
0.35 ± 0.01
(14 ± 0.4)
3. DIMENSIONS AND TOLERANCES:
a = 2.54 +0, - 0.01
(100 +0, - 0.4)
b = 2.54 +0, - 0.01
(100 +0, - 0.4)
C
c = 1.48 +0, - 0.01
(58.1 +0, - 0.4)
d = 1.48 +0, - 0.01
(58.1 +0, - 0.4)
A
4. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
5. SAWING:
Recommended Blade
SEMITEC S1025 QS00 Blade
Ø
125 (4.92)
Note:
c The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is
provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged
and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured
using IR’s established processes. Programs for customer-specified testing are available upon request. IR has
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.
Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a
number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard
package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms
and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which
are available upon request.
d Part number shown is for die in waveform. Contact factory for these other options.
Document Number: 93768
Revision: 06-Mar-07
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