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FD100U06A5P PDF预览

FD100U06A5P

更新时间： 2024-11-21 16:37:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
3页 44K
描述
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1

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中文翻译

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FD100U06A5P 技术参数

是否Rohs认证：不符合生命周期：Active
零件包装代码：DIE包装说明：O-XUUC-N1
针数：1Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.40
风险等级：5.82Is Samacsys：N
应用：GENERAL PURPOSE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.9 VJESD-30 代码：O-XUUC-N1
元件数量：1相数：1
端子数量：1封装主体材料：UNSPECIFIED
封装形状：ROUND封装形式：UNCASED CHIP
认证状态：Not Qualified最大重复峰值反向电压：600 V
最大反向恢复时间：0.027 µs子类别：Rectifier Diodes
表面贴装：YES端子形式：NO LEAD
端子位置：UPPERBase Number Matches：1

FD100U06A5P 数据手册

 浏览型号FD100U06A5P的Datasheet PDF文件第2页浏览型号FD100U06A5P的Datasheet PDF文件第3页 
Bulletin I - 0517J rev. C 03/07  
FD100U06A5B  
FRED Die in Wafer Form  
600V  
VF = 1.9V  
(max.)  
z 100% Tested at Probe c  
z Available in Tape and Reel (upon request),  
Chip Pack, and Sawn on Film d  
5" Wafer  
Electrical Characteristics @ T = 25°C (unless otherwise specified)  
J
Parameter  
Description  
Min  
Typ  
Max  
Test Conditions  
VFM  
Maximum Forward Voltage  
–––  
–––  
1.9V TJ = 25°C, IF = 8A  
VRRM  
IRM  
Minimum Reverse Breakdown Voltage 600V  
–––  
––– TJ = 25°C, IRRM = 200µA  
Max. Reverse Leakage Current  
Typ. Reverse Recovery Time  
–––  
–––  
–––  
–––  
–––  
50µA TJ = 25°C, VRRM = 600V  
trr  
27ns  
45ns  
280nC  
––– IF = 1A, di/dt = 100A/µs, VR = 30V  
––– IF = 8A, di/dt = 200A/µs, VR = 200V  
––– TJ = 125°C, IF = 8A, di/dt = 200A/µs, VR = 200V  
Qrr  
Typ. Reverse Recovery Charge  
Mechanical Data  
Nominal Back Metal Composition, Thickness:  
Nominal Front Metal Composition, Thickness:  
Dimensions:  
Cr-Ni-Ag ( 1kA-2kA-3kA)  
99%Al, 1%Si (3µm)  
0.100" x 0.100" (see drawing)  
125 mm  
Wafer Diameter:  
Wafer Thickness:  
14 mils  
Scribe Line Width  
90 10 µm  
Reject Ink Dot Size  
0.25 mm Diameter Minimum  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300 °C  
TO-220  
Recommended Storage Environment:  
Recommended Die Attach Conditions:  
Reference Package  
Die Outline  
NOTES:  
40 (1.57)  
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).  
Wafer flat alligned with  
side b of the die  
2. CONTROLLING DIMENSION (INCH):  
a
c
0.35 ± 0.01  
(14 ± 0.4)  
3. DIMENSIONS AND TOLERANCES:  
a = 2.54 +0, - 0.01  
(100 +0, - 0.4)  
b = 2.54 +0, - 0.01  
(100 +0, - 0.4)  
C
c = 1.48 +0, - 0.01  
(58.1 +0, - 0.4)  
d = 1.48 +0, - 0.01  
(58.1 +0, - 0.4)  
A
4. LETTER DESIGNATION:  
A = Anode (Top Metal)  
C = Cathode (Back Metal)  
5. SAWING:  
Recommended Blade  
SEMITEC S1025 QS00 Blade  
Ø
125 (4.92)  
Note:  
c The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is  
provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged  
and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured  
using IR’s established processes. Programs for customer-specified testing are available upon request. IR has  
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.  
Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a  
number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard  
package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms  
and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which  
are available upon request.  
d Part number shown is for die in waveform. Contact factory for these other options.  
Document Number: 93768  
Revision: 06-Mar-07  
www.vishay.com  
1
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