型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FD1200R17HP4-K_B2 | INFINEON |
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200% PC | |
FD1200R17HP4KB2BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-7 | |
FD1200R17KE3-K | EUPEC |
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IGBT-modules | |
FD1200R17KE3-K | INFINEON |
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1700V IHM 130mm 斩波器 IGBT 模块,采用第三代 IGBT 技术 - 是 | |
FD1200R17KE3-K_B2 | EUPEC |
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IGBT-modules | |
FD1200R17KE3KB2NOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1700A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 | |
FD1200R17KE3KNOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 | |
FD120H03A5F | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 300V V(RRM), Silicon, DIE-2 | |
FD120H03A5P | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 300V V(RRM), Silicon, DIE-2 | |
FD120H03A5R | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 300V V(RRM), Silicon, DIE-2 |