Datasheet > FD100N06A5B

FD100N06A5B

更新时间： 2024-11-21 20:40:23

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
3页	104K
描述
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER

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FD100N06A5B 技术参数

是否Rohs认证：	不符合	生命周期：	Active
零件包装代码：	WAFER	包装说明：	5 INCH, WAFER
针数：	1	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.40
风险等级：	5.8	应用：	GENERAL PURPOSE
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.94 V	JESD-30 代码：	S-XUUC-N1
元件数量：	1	相数：	1
端子数量：	1	封装主体材料：	UNSPECIFIED
封装形状：	SQUARE	封装形式：	UNCASED CHIP
认证状态：	Not Qualified	最大重复峰值反向电压：	600 V
子类别：	Rectifier Diodes	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	UPPER
Base Number Matches：	1

FD100N06A5B 数据手册

Bulletin I0164J 09/04

FD100N06A5B

FRED Die in Wafer Form

^z100% Tested at Probe (*)

600V

V_F= 1.1 V

(max.)

5" Wafer

Electrical Characteristics @ T = 25°C (unless otherwise specified)

Parameter

V_FM

V_RRM

I_RM

Description

Maximum Forward Voltage

Min

–––

Typ

0.96V

0.86V

–––

Max

Test Conditions

1.1V T_J= 25°C, I_F= 8A

(**)

0.94V T_J= 25°C, I_F= 2A

––– T_J= 25°C, I_RRM= 100µA

5µA T_J= 25°C, V_RRM= 600V

Minimum Reverse Breakdown Voltage 600V

Max. Reverse Leakage Current

–––

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni-Ag ( 1kA-2kA-3kA)

99%Al, 1%Si (3 µm)

0.100" x 0.100" (see drawing)

125 mm

Wafer Diameter:

Wafer Thickness:

Scribe Line Width

14mils

90 ±10 µm

Reject Ink Dot Size

Recommended Storage Environment:

0.25 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

Recommended Die Attach Conditions:

Die Outline

NOTES:

40 (1.57)

Wafer flat alligned with

side b of the die

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).

2. CONTROLLING DIMENSION (INCH):

0.35 ± 0.01

(14 ± 0.4)

3. DIMENSIONS AND TOLERANCES:

a = 2.54 +0, - 0.01

(100 +0, - 0.4)

b = 2.54 +0, - 0.01

(100 +0, - 0.4)

c = 1.48 +0, - 0.01

(58.1 +0, - 0.4)

d = 1.48 +0, - 0.01

(58.1 +0, - 0.4)

4. LETTER DESIGNATION:

A = Anode (Top Metal)

C = Cathode (Back Metal)

5. SAWING:

125 (4.92)

Recommended Blade

SEMITEC S1025 QS00 Blade

Note:

(*) The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged

and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured

using IR’s established processes. Programs for customer-specified testing are available upon request. IR has

experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.

Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a

number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard

package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms

and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which

are available upon request.

(**) V limits refer to packed devices in TO-220

Document Number: 93878

www.vishay.com

12 3

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与FD100N06A5B相关器件

型号	品牌	获取价格	描述	数据表
FD100N06A5F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER
FD100N06A5P	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER
FD100N06A5R	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER
FD100R12KF-K	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 100A I(C) \| M:HL093HW048
FD100U06A5B	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1
FD100U06A5B	INFINEON	获取价格	Rectifier Diode, 1 Element, 600V V(RRM)
FD100U06A5F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1
FD100U06A5P	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1
FD-10A	TDK	获取价格	Ultra High Voltage Ceramic Capacitors
FD-10AU	TDK	获取价格	Ceramic Capacitor, Ceramic, 10% +Tol, 10% -Tol, Y5P, 10% TC, 0.00025uF, Chassis Mount, ROH

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