Datasheet > FD100U06A5B

FD100U06A5B

更新时间： 2024-11-21 21:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
2页	78K
描述
Rectifier Diode, 1 Element, 600V V(RRM)

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FD100U06A5B 数据手册

I - 0517J rev. B

FD100U06A5B

FRED Die in Wafer Form

600V

V_F= 1.25V

(typ.)

z 100% Tested at Probe c

5" Wafer

Electrical Characteristics

Parameter

Description

Min

–––

600V

–––

Typ

1.25V

1.03V

–––

Max

1.8V

1.38V

–––

Test Conditions

V_FM

Typical Forward Voltage

T_J= 25°C, I_F= 8A

V_FM

Typical Forward Voltage

T_J= 25°C, I_F= 2A

V_RRM

I_RM

Minimum Reverse Breakdown Voltage

Max. Reverse Leakage Current

Reverse Recovery Time

T_J= 25°C, I_RRM= 100μA

T_J= 25°C, V_RRM= 600V

–––

2.3μA

–––

t_rr

36 ns

54 ns

I_F= 1A, di/dt = 100A/μs, V_R= 30V 3)

I_F= 8A, di/dt = 100A/μs, V_R= 30V 2)

–––

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni-Ag ( 1kA-2kA-3kA)

99%Al, 1%Si (3 μm)

0.100" x 0.100" (see drawing)

125 mm

Wafer Diameter:

Wafer Thickness:

14 mils

Scribe Line Width

90 ±10 μm

Reject Ink Dot Size

Recommended Storage Environment:

0.25 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

TO-220

Recommended Die Attach Conditions:

Reference Package

Die Outline

NOTES:

40 (1.57)

Wafer flat alligned with

side b of the die

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).

2. CONTROLLING DIMENSION (INCH):

0.35 ± 0.01

(14 ± 0.4)

3. DIMENSIONS AND TOLERANCES:

a = 2.54 +0, - 0.01

(100 +0, - 0.4)

b = 2.54 +0, - 0.01

(100 +0, - 0.4)

c = 1.48 +0, - 0.01

(58.1 +0, - 0.4)

d = 1.48 +0, - 0.01

(58.1 +0, - 0.4)

4. LETTER DESIGNATION:

A = Anode (Top Metal)

C = Cathode (Back Metal)

5. SAWING:

Recommended Blade

125 (4.92)

SEMITEC S1025 QS00 Blade

Note:

1) The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged

and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured

using IR’s established processes. Programs for customer-specified testing are available upon request. IR has

experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.

Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a

number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard

package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms

and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which

are available upon request.

2) V and t limits refer to packaged devices in TO-220 unless otherwise stated.

3) V and t limits refer to wafer level

www.irf.com

03/23/06

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