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FCP104N60F PDF预览

FCP104N60F

更新时间： 2024-11-24 11:12:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 729K
描述
功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，600 V，37 A，104 mΩ，TO-220

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中文翻译

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FCP104N60F 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：12 weeks风险等级：0.95
雪崩能效等级（Eas）：809 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：600 V最大漏极电流 (Abs) (ID)：37 A
最大漏极电流 (ID)：37 A最大漏源导通电阻：0.104 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：357 W
最大脉冲漏极电流 (IDM)：114 A子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FCP104N60F 数据手册

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
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FCP11N60 FAIRCHILD

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FCP11N60 ONSEMI

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 		功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，11
FCP11N60F FAIRCHILD

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 		600V N-Channel MOSFET
FCP11N60F ONSEMI

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 		功率 MOSFET，N 沟道，SUPERFET®，FRFET®， 600 V，11 A，3
FCP11N60N FAIRCHILD

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 		N-Channel MOSFET 600V, 10.8A, 0.299Ω
FCP11N60N ONSEMI

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 		功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，10.8 A，29
FCP11N60N-F102 ONSEMI

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 		功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，10.8 A，29

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