Datasheet > FCP11N60

FCP11N60

更新时间： 2024-11-24 11:11:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
11页	868K
描述
功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，11 A，380 mΩ，TO-220

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中文翻译

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技术参数
数据手册
替代型号

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FCP11N60 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Not Recommended	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	Factory Lead Time：	1 week
风险等级：	7.05	雪崩能效等级（Eas）：	340 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	600 V
最大漏极电流 (ID)：	11 A	最大漏源导通电阻：	0.38 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	33 A
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

FCP11N60 数据手册

Is Now Part of

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中文翻译

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FCP11N60 替代型号

型号	品牌	替代类型	描述	数据表
FCP11N60F	ONSEMI	完全替代	功率 MOSFET，N 沟道，SUPERFET®，FRFET®， 600 V，11 A，3

与FCP11N60相关器件

型号	品牌	获取价格	描述	数据表
FCP11N60F	FAIRCHILD	获取价格	600V N-Channel MOSFET
FCP11N60F	ONSEMI	获取价格	功率 MOSFET，N 沟道，SUPERFET®，FRFET®， 600 V，11 A，3
FCP11N60N	FAIRCHILD	获取价格	N-Channel MOSFET 600V, 10.8A, 0.299Ω
FCP11N60N	ONSEMI	获取价格	功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，10.8 A，29
FCP11N60N-F102	ONSEMI	获取价格	功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，10.8 A，29
FCP1206C123G	CDE	获取价格	CAP FILM 0.012UF 2% 16VDC 1206
FCP1206C123G-H1	CDE	获取价格	CAP FILM 0.012UF 2% 16VDC 1206
FCP1206C123J	CDE	获取价格	CAP FILM 0.012UF 5% 16VDC 1206
FCP1206C123J-H1	CDE	获取价格	Surface Mount Film Capacitors
FCP1206C153G	CDE	获取价格	CAP FILM 0.015UF 2% 16VDC 1206

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