Datasheet > FCH165N60E

FCH165N60E

更新时间： 2023-09-03 20:29:32

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安森美 - ONSEMI		/
页数	文件大小	规格书
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描述
功率 MOSFET，N 沟道，SUPERFET® II，Easy Drive，600 V，23 A，165 mΩ，TO-247

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FCH165N60E 数据手册

FCH165N60E

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

FCH165N60E

Unit

DSS

GSS

Drain to Source Voltage

Gate to Source Voltage

600

− DC

− AC (f > 1 Hz)

Drain Current:

− Continuous (T = 25°C)

− Continuous (T = 100°C)

Drain Current:

− Pulsed (Note 1)

Single Pulsed Avalanche Energy (Note 2)

Avalanche Current (Note 1)

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

525

2.27

100

V/ns

dv/dt

Peak Diode Recovery dv/dt (Note 3)

Power Dissipation

(T = 25°C)

227

W/°C

°C

− Derate Above 25°C

1.82

−55 to + 150

300

T , T

Operating and Storage Temperature Range

STG

Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I = 5.0 A, R = 25 W, Starting T = 25 °C.

3. I ≤ 11.5 A, di/dt ≤ 200 A/ms, V ≤ 380 V, Starting T = 25 °C.

PACKAGE MARKING AND ORDERING INFORMATION

Part Number

Top Marking

Package

Packing Method

Reel Size

Tape Width

Quantity

FCH165N60E

TO−247

Tube

N/A

30 Units

THERMAL CHARACTERISTICS

Symbol

Parameter

FCH165N60E

Unit

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

0.55

°C/W

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123 4 5 6 7...10

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