Datasheet > FCH165N65S3R0-F155

FCH165N65S3R0-F155

更新时间： 2023-09-03 20:38:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	432K
描述
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-247

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FCH165N65S3R0

MOSFET – Power, N-Channel,

SUPERFET III, Easy Drive

650 V, 19 A, 165 mW

Description

www.onsemi.com

SUPERFET III MOSFET is ON Semiconductor’s brand-new high

voltage super-junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on-resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET

Easy drive series helps manage EMI issues and allows for easier

design implementation.

MAX

I MAX

DSS

DS(ON)

650 V

165 mW @ 10 V

19 A

Features

• 700 V @ T = 150°C

• Typ. R

= 140 mW

DS(on)

• Ultra Low Gate Charge (Typ. Q = 39 nC)

• Low Effective Output Capacitance (Typ. C

• 100% Avalanche Tested

= 341 pF)

oss(eff.)

N-Channel MOSFET

Applications

• Telecom / Server Power Supplies

• Industrial Power Supplies

• UPS / Solar

TO−247−3LD

CASE 340CH

MARKING DIAGRAM

$Y&Z&3&K

FCH165

N65S3R0

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FCH165N65S3R0 = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

August, 2019 − Rev. 0

FCH165N65S3R0/D

12 3 4 5 6 7...10

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