DATA SHEET
SILICON TRANSISTOR
FA4xxx
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
PACKAGE DRAWING (Unit: mm)
FEATURES
• Compact package
• Resistors built-in type
• Complementary to FN4xxx
+ꢀ.1
ꢀ.4
–ꢀ.ꢀ5
+ꢀ.1
ꢀ.16
–ꢀ.ꢀ6
Marking
ꢀ to ꢀ.1
3
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-59
2
1
FA4xxx
+ꢀ.1
ꢀ.3
ꢀ.4
–ꢀ.ꢀ5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
1.1 to 1.4
ꢀ.95
2.9 ꢀ.2
ꢀ.95
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
VCBO
VCEO
VEBO
IC
60
50
V
V
EQUIVALENT CIRCUIT
PIN CONNECTION
1: Emitter
<R>
Note1
0.1
V
A
3
Collector Current (pulse) Note2 IC(pulse)
0.2
A
2: Base
2
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
Tj
0.2
W
°C
°C
3: Collector
150
R
1
Tstg
–55 to +150
R
2
1
Note 1.
<R>
PART NUMBER
VEBO
(V)
MARK
R1
R2
PART NUMBER
VEBO
(V)
MARK
R1
R2
(kΩ)
(kΩ)
(kΩ)
(kΩ)
FA4A4M
FA4F4M
FA4L4M
FA4L3M
FA4L3N
FA4L3Z
FA4A3Q
FA4A4P
FA4F4N
10
10
10
10
5
AA1
AB1
AC1
AD1
AE1
AF1
AG1
AH1
AJ1
10.0
22.0
47.0
4.7
10.0
22.0
47.0
4.7
FA4L4L
FA4A4Z
FA4F4Z
FA4L4Z
FA4F3M
FA4F3P
FA4F3R
FA4A4L
FA4L4K
15
5
AK1
AL1
AM1
AN1
AP1
AQ1
AR1
AS1
AT1
47.0
10.0
22.0
47.0
2.2
22.0
5
5
4.7
10.0
10
5
2.2
10.0
47.0
4.7
5
4.7
2.2
5
1.0
10.0
47.0
47.0
5
2.2
5
10.0
22.0
15
25
10.0
47.0
5
10.0
Note 2. PW ≤ 10 ms, Duty Cycle ≤ 50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16493EJ3V0DS00 (3rd edition)
Date Published December 2005 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.