Datasheet > FA4A4Z-L-A

FA4A4Z-L-A

更新时间： 2024-11-08 14:36:59

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体管
页数	文件大小	规格书
22页	411K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59

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中文翻译

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技术参数
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FA4A4Z-L-A 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.8
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	135
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.2 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

FA4A4Z-L-A 数据手册

DATA SHEET

SILICON TRANSISTOR

FA4xxx

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

PACKAGE DRAWING (Unit: mm)

FEATURES

• Compact package

• Resistors built-in type

• Complementary to FN4xxx

+ꢀ.1

ꢀ.4

–ꢀ.ꢀ5

+ꢀ.1

ꢀ.16

–ꢀ.ꢀ6

Marking

ꢀ to ꢀ.1

ORDERING INFORMATION

PART NUMBER

PACKAGE

SC-59

FA4xxx

+ꢀ.1

ꢀ.3

ꢀ.4

–ꢀ.ꢀ5

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

1.1 to 1.4

ꢀ.95

2.9 ꢀ.2

ꢀ.95

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

VCBO

V^CEO

V^EBO

I^C

EQUIVALENT CIRCUIT

PIN CONNECTION

1: Emitter

<R>

Note1

0.1

Collector Current (pulse) ^Note2IC(pulse)

0.2

2: Base

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

T^j

0.2

°C

3: Collector

150

T^stg

–55 to +150

Note 1.

<R>

PART NUMBER

VEBO

(V)

MARK

R¹

R²

PART NUMBER

VEBO

(V)

MARK

R¹

R²

(kΩ)

FA4A4M

FA4F4M

FA4L4M

FA4L3M

FA4L3N

FA4L3Z

FA4A3Q

FA4A4P

FA4F4N

AA1

AB1

AC1

AD1

AE1

AF1

AG1

AH1

AJ1

10.0

22.0

47.0

4.7

10.0

22.0

47.0

4.7

FA4L4L

FA4A4Z

FA4F4Z

FA4L4Z

FA4F3M

FA4F3P

FA4F3R

FA4A4L

FA4L4K

AK1

AL1

AM1

AN1

AP1

AQ1

AR1

AS1

AT1

47.0

10.0

22.0

47.0

2.2

22.0

4.7

10.0

2.2

10.0

47.0

4.7

2.2

1.0

10.0

47.0

2.2

10.0

22.0

10.0

47.0

10.0

Note 2. PW ≤ 10 ms, Duty Cycle ≤ 50%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16493EJ3V0DS00 (3rd edition)

Date Published December 2005 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...22

中文翻译

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与FA4A4Z-L-A相关器件

型号	品牌	获取价格	描述	数据表
FA4A4Z-L-AT	NEC	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4A4Z-T1B	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4A4Z-T2B-A	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4F3M	NEC	获取价格	RESISTOR BUILT-IN TYPE NPN TRANSISTOR
FA4F3M	RENESAS	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
FA4F3M-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59,
FA4F3M-AT	NEC	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4F3M-L	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4F3M-L-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4F3M-L-AT	NEC	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59

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