是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最大集电极电流 (IC): | 0.1 A |
最小直流电流增益 (hFE): | 135 | 元件数量: | 1 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FA4A4Z-T2B-A | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4F3M | NEC |
获取价格 |
RESISTOR BUILT-IN TYPE NPN TRANSISTOR | |
FA4F3M | RENESAS |
获取价格 |
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN | |
FA4F3M-A | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59, | |
FA4F3M-AT | NEC |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4F3M-L | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4F3M-L-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4F3M-L-AT | NEC |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4F3M-T1B | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4F3M-T1B-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |