Datasheet > FA4A4P-AT

FA4A4P-AT

更新时间： 2024-01-24 16:48:05

品牌	Logo	应用领域
日电电子 - NEC		晶体管
页数	文件大小	规格书
22页	411K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59

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技术参数
数据手册

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FA4A4P-AT 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.8
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	85
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.2 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

FA4A4P-AT 数据手册

FA4xxx

[FA4L4M]

TYPICAL CHARACTERISTICS (T^A= 25°C)

COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

0.5

0.4

0.3

0.2

0.1

5ꢀ

V^IN= 5.0 V

10.0 V

IB = 22ꢀ A

17ꢀ

12ꢀ

7ꢀ

4ꢀ

3ꢀ

2ꢀ

1ꢀ

ꢀ

15.0 V

2ꢀ

ꢀ

1ꢀ

CE - Collector to Emitter Voltage - V

- Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT

COLLECTOR SATURATION VOLTAGE vs.

COLLECTOR CURRENT

1000

I^C= 10・I^B

V^CE= 5.0 V

0.1

T^A= 75°C

25°C

100

T^A= 75°C

25°C

−25°C

0.01

- Collector Current - mA

100

- Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT

V^CE= 0.2 V

COLLECTOR CURRENT vs. INPUT VOLTAGE

100

1000

V^CE= 5.0 V

T^A= 75°C

100

T^A= −25°C

25°C

−25°C

75°C

25°C

0.1

0.4

0.6

0.8

1.2

1.4

1.6

1.8

100

IN - Input Voltage - V

- Collector Current - mA

RESISTER vs. AMBIENT TEMPERATURE

-25

100

- Ambient Temperature - °C

Data Sheet D16493EJ3V0DS

1...3 4 567 8 9...22

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