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EVAL-ADuM4121EBZ PDF预览

EVAL-ADuM4121EBZ

更新时间: 2024-09-16 01:22:47
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亚德诺 - ADI /
页数 文件大小 规格书
16页 529K
描述
2 A peak output current (<2 Ω RDSON)

EVAL-ADuM4121EBZ 数据手册

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High Voltage, Isolated Gate Driver with  
Internal Miller Clamp, 2 A Output  
Data Sheet  
ADuM4121/ADuM4121-1  
FEATURES  
GENERAL DESCRIPTION  
2 A peak output current (<2 Ω RDSON  
2.5 V to 6.5 V input  
4.5 V to 35 V output  
Undervoltage lockout (UVLO) at 2.5 V VDD1  
Multiple UVLO options on VDD2  
Grade A: 4.4 V (typical) UVLO on VDD2  
Grade B: 7.3 V (typical) UVLO on VDD2  
Grade C: 11.3 V (typical) UVLO on VDD2  
Precise timing characteristics  
53 ns maximum isolator and driver propagation delay  
CMOS input logic levels  
High common-mode transient immunity: >150 kV/µs  
High junction temperature operation: 125°C  
Default low output  
)
The ADuM4121/ADuM4121-11 are 2 A isolated, single-channel  
drivers that employ Analog Devices, Inc.s iCoupler® technology  
to provide precision isolation. The ADuM4121/ADuM4121-1  
provide 5 kV rms isolation in the wide-body, 8-lead SOIC package.  
Combining high speed CMOS and monolithic transformer  
technology, these isolation components provide outstanding  
performance characteristics superior to alternatives such as the  
combination of pulse transformers and gate drivers.  
The ADuM4121/ADuM4121-1 operate with an input supply  
ranging from 2.5 V to 6.5 V, providing compatibility with lower  
voltage systems. In comparison to gate drivers that employ high  
voltage level translation methodologies, the ADuM4121/  
ADuM4121-1 offer the benefit of true, galvanic isolation  
between the input and the output.  
Internal Miller clamp  
The ADuM4121/ADuM4121-1 include an internal Miller clamp  
that activates at 2 V on the falling edge of the gate drive output,  
supplying the driven gate with a lower impedance path to reduce  
the chance of Miller capacitance induced turn on.  
Safety and regulatory approvals (pending)  
UL recognition per UL 1577  
5 kV rms for 1-minute withstand  
CSA Component Acceptance Notice 5A  
VDE certificate of conformity (pending)  
DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12  
Options exists to allow the thermal shutdown to be enabled or  
disabled. As a result, the ADuM4121/ADuM4121-1 provide  
reliable control over the switching characteristics of insulated  
gate bipolar transistor (IGBT)/metal oxide semiconductor field,  
effect transistor (MOSFET) configurations over a wide range of  
switching voltages.  
V
IORM = 849 V peak  
Wide-body, 8-lead SOIC  
APPLICATIONS  
Switching power supplies  
Isolated IGBT/MOSFET gate drives  
Industrial inverters  
Gallium nitride (GaN)/silicon carbide (SiC) power devices  
FUNCTIONAL BLOCK DIAGRAM  
UVLO  
TSD  
ADuM4121/  
1
2
8
7
V
V
V
DD1  
DD2  
ADuM4121-1  
DECODE  
AND  
ENCODE  
V +  
I
OUT  
LOGIC  
V –  
I
3
4
6
5
CLAMP  
2V  
GND  
GND  
2
1
UVLO  
Figure 1.  
1 Protected by U.S. Patents 5,952,849; 6,873,065; 7,075,239. Other patents pending.  
Rev. 0  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rightsof third parties that may result fromits use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks andregisteredtrademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Technical Support  
©2016 Analog Devices, Inc. All rights reserved.  
www.analog.com  
 
 
 
 

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