Datasheet > ESD7016

ESD7016

更新时间： 2022-04-22 10:40:21

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	437K
描述
Low Capacitance ESD Protection USB3.0

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数据手册

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ESD7016 数据手册

ESD7016, SZESD7016

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

Breakdown Voltage

RWM

I/O Pin to GND

I = 1 mA, I/O Pin to GND

5.0

5.5

Reverse Leakage Current

Clamping Voltage (Note 1)

Clamping Voltage (Note 2)

= 5 V, I/O Pin to GND

1.0

RWM

= 1 A, I/O Pin to GND (8 x 20 ms pulse)

IEC61000−4−2, 8 kV Contact

See Figures 1 and 2

Clamping Voltage

TLP (Note 3)

See Figures 6 through 9

8 A

16 A

14.6

20.5

Junction Capacitance

= 0 V, f = 1 MHz between I/O Pins and GND

0.15

0.03

0.20

Junction Capacitance

Difference

1. Surge current waveform per Figure 5.

2. For test procedure see Figures 3 and 4 and application note AND8307/D.

3. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z = 50 W, t = 100 ns, t = 4 ns, averaging window; t = 30 ns to t = 60 ns.

−10

−20

−30

−40

−50

−60

−70

−80

−90

−10

−100

−20

TIME (ns)

100

120

140

100

120 140

TIME (ns)

Figure 1. IEC61000−4−2 +8 KV Contact

Figure 2. IEC61000−4−2 −8 KV Contact

Clamping Voltage

http://onsemi.com

123 4 5 6 7 8

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