是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Contact Manufacturer | 包装说明: | HC-49/US, 3 PIN |
Reach Compliance Code: | compliant | HTS代码: | 8541.60.00.60 |
风险等级: | 5.72 | 其他特性: | AT-CUT |
老化: | 5 PPM/FIRST YEAR | 晶体/谐振器类型: | SERIES - 3RD OVERTONE |
驱动电平: | 1000 µW | 频率稳定性: | 0.01% |
频率容差: | 50 ppm | 安装特点: | THROUGH HOLE MOUNT |
标称工作频率: | 34.999 MHz | 最高工作温度: | 70 °C |
最低工作温度: | -20 °C | 物理尺寸: | L11.2XB4.7XH3.5 (mm)/L0.441XB0.185XH0.138 (inch) |
串联电阻: | 100 Ω | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ESAB3-35.000MHZ-3 | MMD |
获取价格 |
Series - 3Rd Overtone Quartz Crystal, 35MHz Nom, HC-49/US, 3 PIN | |
ESAB3-35.000MHZ-I | MMD |
获取价格 |
Series - 3Rd Overtone Quartz Crystal, 35MHz Nom, HC-49/US, 2 PIN | |
ESAB3-35.000MHZ-L | MMD |
获取价格 |
Series - 3Rd Overtone Quartz Crystal, 35MHz Nom, HC-49/US, 3 PIN | |
ESAB33CS | FUJI |
获取价格 |
FAST RECOVERY DIODE | |
ESAB34M | FUJI |
获取价格 |
FAST RECOVERY DIODE | |
ESAB34M-02C | FUJI |
获取价格 |
Rectifier Diode, 1 Phase, 2 Element, 2.5A, 200V V(RRM), Silicon, SC-67, 3 PIN | |
ESAB34MC | FUJI |
获取价格 |
FAST RECOVERY DIODE | |
ESAB82-004 | FUJI |
获取价格 |
SCHOTTKY BARRIER DIODE | |
ESAB82-004_01 | FUJI |
获取价格 |
SCHOTTKY BARRIER DIODE | |
ESAB82-004R | FUJI |
获取价格 |
Schottky Barrier Diode |