TH09/2479
IATF 0113686
TH97/2478
SGS TH07/1033
www.eicsemi.com
FAST RECOVERY DIODES
ESAC25(C,N,D)
TO-220AB
PRV : 200 - 400 Volts
Io : 10 Amperes
0.154(3.91)DIA.
0.148(3.74)
0.185(4.70)
0.175(4.44)
0.415(10.54)MAX.
0.055(1.39)
0.045(1.14)
0.113(2.87)
0.103(2.62)
FEATURES :
0.145(3.68)
* High voltage by mesa design
* High High speed switching
* High reliability
0.135(3.43)
0.603(15.32)
0.573(14.55)
0.635(16.13)
0.625(15.87)
0.350(8.89)
0.330(8.39)
1
2 3
0.160(4.06)
0.140(3.56)
* Pb / RoHS Free
0.560(14.22)
0.530(13.46)
Connection Diagram
0.037(0.94)
0.027(0.68)
2
0.022(0.56)
0.014(0.36)
0.205(520)
0.195(4.95)
ESAC25-□□C
ESAC25-□□N
ESAC25-□□D
1
1
3
0.105(2.67)
0.095(2.41)
2
2
3
Dimensions in inches and ( millimeters )
1
3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
SYMBOL
ESAC25-02
ESAC25-04
UNIT
VRRM
VRSM
Maximum Repetitive Peak Reverse Voltage
Maximum Non-Repetitive Peak Reverse Voltage
Maximum Average Forward Current
200
250
400
450
V
V
IF(AV)
IFSM
10
70
A
A
(Square wave, duty=1/2, Tc=106°C)
Maximum Peak Forward Surge Current,
10ms single sine-wave
Maximum Forward Voltage at IF = 2.5 A
Maximum Reverse Current, VR = VRRM
Maximum Reverse recovery time
VF
IRM
1.3
10
V
mA
Trr
400
ns
RθJC
TJ
Maximum Thermal Resistance, Junction to Case
Junction Temperature Range
3.0
°C/W
°C
- 40 to + 150
- 40 to + 150
TSTG
Storage Temperature Range
°C
Note :
(1) Reverse Recovery Test Conditions : IF = 100 mA, IR = 100 mA
Page 1 of 2
Rev. 02 : March 31, 2005