Datasheet > ESAB82-004_01

ESAB82-004_01

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
富士电机 - FUJI		肖特基二极管
页数	文件大小	规格书
3页	51K
描述
SCHOTTKY BARRIER DIODE

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数据手册

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ESAB82-004_01 数据手册

(40V / 5A )

ESAB82-004 (5A)

Outline drawings, mm

SCHOTTKY BARRIER DIODE

4.5^±0.2

10^+0.5

Ø3.6^±0.2

1.2

0.4

0.8

2.54

2.7

5.08

Features

Low VF

JEDEC

EIAJ

TO-220AB

SC-46

Super high speed switching

High reliability by planer design

Connection diagram

Applications

High speed power switching

Maximum ratings and characteristics

Absolute maximum ratings

Symbol

V^RRM

VRSM

Conditions

Item

Rating

Unit

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Average output current

Surge current

tw=500ns, duty=1/40

Square wave, duty=1/2

Tc=126°C

5.0*

Sine wave

10ms

IFSM

100

Operating junction temperature

Storage temperature

-40 to +150

°C

Tstg

* Average forward current of centertap full wave connection

Electrical characteristics (Ta=25°C Unless otherwise specified )

Item

Unit

Symbol

VFM

Max.

0.55

5.0

Conditions

I^FM=2.0A

Forward voltage drop

Reverse current

VR=VRRM

°C/W

IRRM

Junction to case

Thermal resistance

Rth(j-c)

5.0

12 3

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