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ESA8UN3242-70JG-S PDF预览

ESA8UN3242-70JG-S

更新时间: 2024-10-28 20:07:07
品牌 Logo 应用领域
富士通 - FUJITSU 动态存储器内存集成电路
页数 文件大小 规格书
8页 126K
描述
EDO DRAM Module, 8MX32, 70ns, CMOS, PSMA72

ESA8UN3242-70JG-S 技术参数

生命周期:Obsolete零件包装代码:SIMM
包装说明:SIMM, SSIM72针数:72
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PSMA-N72内存密度:268435456 bit
内存集成电路类型:EDO DRAM MODULE内存宽度:32
端子数量:72字数:8388608 words
字数代码:8000000最高工作温度:70 °C
最低工作温度:组织:8MX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SIMM封装等效代码:SSIM72
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
电源:5 V认证状态:Not Qualified
刷新周期:2048座面最大高度:25.4 mm
自我刷新:NO最大待机电流:0.016 A
子类别:DRAMs最大压摆率:0.736 mA
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:SINGLEBase Number Matches:1

ESA8UN3242-70JG-S 数据手册

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February1997  
Revision 1.1  
DATA SHEET  
ESA8UN324(2/4)-(60/70)(J/T)(G/S)-S  
32MByte (8M x 32) CMOS EDO DRAM Module  
General Description  
The ESA8UN324(2/4)-(60/70()J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module  
organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA8UN3242 supports  
2K refresh. ESA8UN3244 supports 4K refresh.  
The module utilizes sixteen, Fujitsu MB811(7/6)405A-(60/70)PJ CMOS 4Mx4 EDO dynamic RAM in a surface mount package  
on an epoxy laminate substrate. Each device is accompanied by a decoupling capacitor for improved noise immunity.  
Control lines provided are such that byte control is possible.  
Features  
• High Density: 32MByte  
• Fast Access Time of 60/70 ns (max.)  
• Low Power:  
Active (60/70 ns)  
4.7/4.0 W (max.) - 2K  
3.4/2.9 W (max.) - 4K  
176mW (max.) - Standby (TTL)  
88mW (max.) - Standby (CMOS)  
• TTL-compatible inputs and outputs  
• Separate power and ground planes  
• Single power supply of 5V±10%  
• Height: 1.00 inch  
ABSOLUTE MAXIMUM RATINGS  
Item  
Symbol  
Ratings  
-1 to +7.0  
8
Unit  
V
Voltage on any pin relative to V  
V
SS  
T
P
Power Dissipation  
W
T
T
Operating Temperature  
Storage Temperate  
0 to +70  
-55 to +125  
-50 to +50  
°C  
°C  
mA  
opr  
T
stg  
I
Short Circuit Output Current  
OS  
RECOMMENDED DC OPERATING CONDITIONS  
(TA = 0 to +70 °C)  
Symbol  
Parameter  
Supply Voltage  
Min  
Typ  
Max  
5.5  
0
Unit  
V
V
V
V
4.5  
0
5.0  
V
V
V
V
CC  
SS  
IH  
Ground  
0
-
V
+1  
Input High voltage  
Input Low voltage  
2.4  
-1  
CC  
-
0.8  
IL  
Fujitsu Microelectronics, Inc.  
1

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