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ES3GHE3_A/I PDF预览

ES3GHE3_A/I

更新时间: 2024-11-01 20:56:11
品牌 Logo 应用领域
威世 - VISHAY 功效光电二极管
页数 文件大小 规格书
5页 96K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

ES3GHE3_A/I 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMC, 2 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:12 weeks风险等级:1.04
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
参考标准:AEC-Q101最大重复峰值反向电压:400 V
最大反向电流:10 µA最大反向恢复时间:0.05 µs
表面贴装:YES端子形式:C BEND
端子位置:DUALBase Number Matches:1

ES3GHE3_A/I 数据手册

 浏览型号ES3GHE3_A/I的Datasheet PDF文件第2页浏览型号ES3GHE3_A/I的Datasheet PDF文件第3页浏览型号ES3GHE3_A/I的Datasheet PDF文件第4页浏览型号ES3GHE3_A/I的Datasheet PDF文件第5页 
ES3F, ES3G  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated pellet chip junction  
• Ideal for automated placement  
• Ultrafast reverse recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified  
DO-214AB (SMC)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
VRRM  
IFSM  
300 V, 400 V  
100 A  
MECHANICAL DATA  
trr  
35 ns  
Case: DO-214AB (SMC)  
Molding compound meets UL 94 V-0 flammability rating  
VF at IF  
1.1 V  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
TJ max.  
Package  
Diode variations  
150 °C  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
DO-214AB (SMC)  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
ES3F  
EF  
ES3G  
EG  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRWM  
VRMS  
IF(AV)  
300  
225  
210  
400  
300  
280  
V
V
V
A
Maximum average forward rectified current at TL = 110 °C  
3.0  
100  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 25-Feb-16  
Document Number: 88590  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

ES3GHE3_A/I 替代型号

型号 品牌 替代类型 描述 数据表
ES3GHE3/9AT VISHAY

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Surface Mount Ultrafast Plastic Rectifier

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