Datasheet > ES3H

ES3H

更新时间： 2024-11-02 14:48:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1594K
描述
SMCG

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中文翻译

获取价格

数据手册

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ES3H 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CCOO..,, LLTTDD

SMCG Plastic-Encapsulate Diodes

Super Fast Recovery Rectifier Diodes

ES3A THRU ES3J

Features

● I_F(AV)

SMCG

● VRRM

50V-600V

● High surge current capability

●

Polarity: Color band denotes cathode

Applications

● Rectifier

Marking

● ES3X

X From ATo J

Limiting Values(Absolute Maximum Rating)

ES3

Item

Symbol Unit

Test Conditions

V_RRM

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

200 300 400 500 600

100 150

35 70 105 140 210 280 350 420

V_RMS

V_DC

MaximumDCBlocking Voltage

200 300 400 500 600

100 150

60Hz Half-sine wave，

Resistance load，T_L=100℃

Average Forward Current

3.0

I_F(AV)

I_FSM

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave，

1 cycle，Ta=25℃

100

Operation Junction and

Storage Temperature Range

T_J,T_STG

℃

-55 ~ +150

Electrical Characteristics (T=25℃ Unless otherwise specified）

ES3

Symbol Unit

Test Condition

Item

V_F

I_F=3.0A

Peak Forward Voltage

0.95

1.25

1.7

Maximum reverse recovery

time

I =0.5A,I =1.0A,I

_rr=0.25A

I_RRM1

I_RRM2

T =25℃

V_RM=V_RRM

Peak Reverse Current

μA

T =100℃

500

Measured at 1MHz and applied

reverse voltage of 4.0V D.C.

C_J

Typical junction capacitance

Thermal Resistance(Typical)

Between junction and ambient

Between junction and terminal

R_θ

J-A

℃/

R_θ

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm) copper

pad areas

www.jscj-elec.com

Rev. - 1.1

12 3 4

中文翻译

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