Datasheet > ES3H

ES3H

更新时间： 2024-11-01 20:23:35

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鲁光 - LGE		/
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获取价格

技术参数
数据手册

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ES3H 技术参数

Case Style：	SMC	IF(A)：	3
VRRM (V)：	500	IFSM (A)：	100
VF (V)：	1.7	@ IF (A)：	3
Maximum reverse current：	10	TRR(nS)：	35
class：	Diodes

ES3H 数据手册

ES3A-ES3J

3.0AMPS Surface Mount Super Fast Rectifiers

Features

ꢀ

Glass passivated junction chip

For surface mounted applications

Low profile package

Built-in strain relief

Ideal for automated placement

Easy pick and place

Super fast recovery time for high efficiency

Glass passivated chip junction

High temperature soldering:

260^oC/10 seconds at terminals

Plastic material used carries Underwriters

Laboratory Classification 94V-0

SMC/DO-214AB

ꢀ

Mechanical Data

ꢀ

Cases: Molded plastic

Terminals: Pure tin plated, lead free.

Polarity: Indicated by cathode band

Weight: 0.21 gram

Marking Information

Dimensions in inches and (millimeters)

LGE：Lu Guang Electronic

XXXX：marking code (ES3A-ES3J)

XXXX

Maximum Ratings and Electrical Characteristics

Rating at 25^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

Type Number

Units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

50 100 150 200 300 400 500 600

35 70 105 140 210 280 350 420

V_RRM

V_RMS

V_DC

Maximum DC Blocking Voltage

50 100 150 200 300 400 500 600

Maximum Average Forward Rectified Current

See Fig. 1

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method ) @T_L= 100 ^oC

3.0

I_(AV)

100

I_FSM

Maximum Instantaneous Forward Voltage

@ 3.0A

0.95

1.3

1.7

V_F

I_R

Maximum DC Reverse Current @ T_A=25 ^oC

at Rated DC Blocking Voltage @ T_A=100 ^oC

500

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Typical Thermal Resistance (Note 3)

Trr

θJA

^oC /W

θJL

^oC

Operating Temperature Range

Storage Temperature Range

T_J

-55 to +150

T^STG

1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1 MHz and Applied VR=4.0 Volts

Notes:

3. Units Mounted on P.C.B. with 0.6” x 0.6”(16mm x 16mm) Copper Pad Areas

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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