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ES3GHE3/9AT PDF预览

ES3GHE3/9AT

更新时间: 2024-11-01 06:57:55
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管功效
页数 文件大小 规格书
5页 108K
描述
Surface Mount Ultrafast Plastic Rectifier

ES3GHE3/9AT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.29
Is Samacsys:N其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

ES3GHE3/9AT 数据手册

 浏览型号ES3GHE3/9AT的Datasheet PDF文件第2页浏览型号ES3GHE3/9AT的Datasheet PDF文件第3页浏览型号ES3GHE3/9AT的Datasheet PDF文件第4页浏览型号ES3GHE3/9AT的Datasheet PDF文件第5页 
ES3F & ES3G  
Vishay General Semiconductor  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated chip junction  
• Ideal for automated placement  
• Ultrafast reverse recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
DO-214AB (SMC)  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectification and  
freewheeling application in switching mode converters  
and inverters for consumer, computer and  
telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
VRRM  
IFSM  
trr  
300 V, 400 V  
100 A  
MECHANICAL DATA  
Case: DO-214AB (SMC)  
35 ns  
Epoxy meets UL 94V-0 flammability rating  
VF  
1.1 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
150 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
ES3F  
EF  
ES3G  
EG  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRWM  
VRMS  
IF(AV)  
300  
225  
210  
400  
300  
280  
V
V
V
A
Maximum average forward rectified current at TL = 110 °C  
3.0  
100  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
T
J, TSTG  
- 55 to + 150  
°C  
Document Number: 88590  
Revision: 20-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

ES3GHE3/9AT 替代型号

型号 品牌 替代类型 描述 数据表
ES3GHE3_A/I VISHAY

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Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
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