Datasheet > ES1B-F-Q1

ES1B-F-Q1

更新时间： 2024-10-31 18:06:43

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
3页	1509K
描述
SMAF

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中文翻译

获取价格

数据手册

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ES1B-F-Q1 数据手册

ES1A-F-Q1 THRU ES1J-F-Q1

1.0A Surface Mount Super

Fast Rectifiers-50-600V

Features

Package outline

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

SMAF

For surface mounted applications

Super fast switching for high efficiency

Low reverse leakage

Cathode Band

Top View

Built-in strain relief,ideal for automated placement

High forward surge current capability

0.110(2.80)

0.094(2.40)

0.065(1.65)

0.053(1.35)

High temperature soldering guaranteed:

250 C/10 seconds at terminals

0.141(3.60)

0.126(3.20)

Glass passivated chip junction

Compliant to RoHS Directive 2011/65/EU

Compliant to Halogen-free

0.012(0.30)

0.004(0.10)

0.049(1.25)

0.037(0.95)

0.047(1.20)

0.028(0.70)

Suffix "-Q1" for AEC-Q101

Mechanical data

Case: JEDEC SMAF molded plastic body

0.189(4.80)

0.173(4.40)

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Maximum ratings and Electrical Characteristics (AT T_A=25^oC unless otherwise noted)

MAX.

Symbol

TYP.

UNIT

MIN.

PARAMETER

CONDITIONS

I_O

Forward rectified current

See Fig.1

1.0

I_FSM

Forward surge current

8.3ms single half sine-wave (JEDEC methode)

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 100^OC

5.0

I_R

Reverse current

μA

Junction to ambient

NOTE 1

^OC/W

Thermal resistance

R_θJA

C_J

^OC

Diode junction capacitance

Storage temperature

f=1MHz and applied 4V DC reverse voltage

+150

-65

T_STG

Operating

V_R

V_RMS

(V)

V_F

t_rr

SYMBOLS

-Q1

V_RRM

(V)

temperature

T_J, (^OC)

(V)

(ns)

*1 Repetitive peak reverse voltage

*2 RMS voltage

ES1A-F

ES1B-F-Q1

ES1C-F-Q1

ES1D-F-Q1

ES1E-F-Q1

100

150

200

300

100

150

200

300

1.00

105

140

210

*3 Continuous reverse voltage

*4 Maximum forward voltage@I_F=1.0A

*5 Maximum Reverse recovery time, note 2

55 to +150

1.25

1.70

-Q1

400

600

280

420

400

600

ES1G-F

ES1J-F-Q1

Note:

1.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

2. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A

http://www.anbonsemi.com

Document ID

AS-1040003

Issued Date

2018/03/08

Revised Date

Revision

Page.

TEL:+86-755-23776891

2023/09/04

Page 1

FAX:+86-755-81482182

12 3

中文翻译

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与ES1B-F-Q1相关器件

型号	品牌	获取价格	描述	数据表
ES1BG	MDD	获取价格	SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER
ES1B-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC,
ES1B-GT3	SENSITRON	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
ES1BHE3	VISHAY	获取价格	DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal
ES1B-HE3	VISHAY	获取价格	DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal
ES1B-HE3/61T	VISHAY	获取价格	暂无描述
ES1BHE3_A/	VISHAY	获取价格	SIGNAL DIODE
ES1BHE3_A/H	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
ES1BHE3_A/I	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
ES1B-HF	COMCHIP	获取价格	Rectifier Diode,

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