Datasheet > ES1B-HE3/61T

ES1B-HE3/61T

更新时间： 2024-01-22 05:27:13

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	88K
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数据手册

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ES1B-HE3/61T 数据手册

ES1A thru ES1D

Vishay General Semiconductor

Surface Mount Ultrafast Plastic Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power losses

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

DO-214AC (SMA)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and

freewheeling application in switching mode converters

and inverters for consumer, computer, automotive and

telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

V_RRM

I_FSM

t_rr

50 V to 200 V

30 A

MECHANICAL DATA

Case: DO-214AC (SMA)

15 ns

V_F

0.92 V

Epoxy meets UL 94V-0 flammability rating

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC-Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

ES1A

ES1B

ES1C

ES1D

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

Maximum average forward rectified current (Fig. 1)

100

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

www.vishay.com

650

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88586

Revision: 27-Aug-08

12 3 4

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