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ES1BHE3 PDF预览

ES1BHE3

更新时间: 2024-11-18 20:44:35
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
4页 318K
描述
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode

ES1BHE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.55
其他特性:LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.025 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

ES1BHE3 数据手册

 浏览型号ES1BHE3的Datasheet PDF文件第2页浏览型号ES1BHE3的Datasheet PDF文件第3页浏览型号ES1BHE3的Datasheet PDF文件第4页 
ES1A thru ES1D  
Vishay General Semiconductor  
Surface Mount Ultrafast Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
50 V to 200 V  
30 A  
15 ns  
VF  
0.92 V  
Tj max.  
150 °C  
DO-214AC (SMA)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AC (SMA)  
• Ideal for automated placement  
• Glass passivated chip junction  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power losses  
• High forward surge capability  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer, automotive and  
Telecommunication  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Device marking code  
Symbol  
ES1A  
EA  
ES1B  
EB  
ES1C  
EC  
ES1D  
ED  
Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
100  
150  
200  
V
V
V
A
A
Maximum RMS voltage  
35  
50  
70  
105  
150  
140  
200  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
IFSM  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
30  
- 55 to + 150  
Operating junction and storage temperature range  
TJ, TSTG  
°C  
Document Number 88586  
26-Jul-05  
www.vishay.com  
1

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