Datasheet > ES1BG

ES1BG

更新时间： 2024-11-19 01:24:47

品牌	Logo	应用领域
辰达行 - MDD		超快速恢复二极管
页数	文件大小	规格书
3页	763K
描述
SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER

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中文翻译

获取价格

数据手册

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ES1BG 数据手册

ES1AG THRU ES1JG

Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere

SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER

DO-214AC/SMA

Features



The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

For surface mounted applications

Low reverse leakage



0.110(2.80)

0.094(2.40)

0.067 (1.70)

0.051 (1.30)

Built-in strain relief,ideal for automated

placement High forward surge current capability

High temperature soldering guaranteed:

250°C/10 seconds at terminals

0.177(4.50)

0.157(3.99)

0.012(0.305)

0.006(0.152)

0.096(2.42)

0.078(1.98)

Glass passivated chip junction

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

Mechanical Data

0.208(5.30)

0.188(4.80)

Case : JEDEC DO-214AC/SMA Molded plastic body

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight

: 0.002 ounce, 0.055 grams

Maximum Ratings And Electrical Characteristics

Ratings at 25°C ambient temperature unlss otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter

ES1AG ES1BG ES1CG ES1DG ES1EG ES1GG ES1JG

SYMBOLS

UNITS

MDD

ES1A

MDD

ES1B

MDD

ES1C

MDD

ES1D

MDD

ES1E

MDD

ES1G

MDD

ES1J

Marking Code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RMM

RMS

100

150

105

150

200

140

200

300

210

300

400

280

400

600

420

600

Maximum DC blocking voltage

100

(AV)

Maximum average forward rectified current

1.0

at TL=55

℃

Peak forward surge current

8.3ms single half sine-wave

superimposed onrated load (JEDEC Method)

FSM

Maximum instantaneous forward voltage at 1.0A

0.95

1.25

1.7

5.0

100.0

Maximum DC reverse current

at rated DCblocking voltage

=25

TA=125℃

(NOTE 1)

℃

μA

Maximum reverserecovery time

Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

15.0

75.0



℃/

℃

Operating junction and storage temperature range

STG

-55 to +150

Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2.P.C.B. mounted with1.0x1.0”(2.54x2.54cm)copperpad areas.

3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

4.The typical data above is for referenceonly.

DN:T19704A0

https://www.microdiode.com

Rev:2019A0

Page :1

12 3

中文翻译

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与ES1BG相关器件

型号	品牌	获取价格	描述	数据表
ES1B-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC,
ES1B-GT3	SENSITRON	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
ES1BHE3	VISHAY	获取价格	DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal
ES1B-HE3	VISHAY	获取价格	DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal
ES1B-HE3/61T	VISHAY	获取价格	暂无描述
ES1BHE3_A/	VISHAY	获取价格	SIGNAL DIODE
ES1BHE3_A/H	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
ES1BHE3_A/I	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
ES1B-HF	COMCHIP	获取价格	Rectifier Diode,
ES1BJ	LGE	获取价格	暂无描述

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